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PMV120ENEAR
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Nexperia USA Inc. PMV120ENEAR

Manufacturer No:
PMV120ENEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.1A TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PMV120ENEAR is a high-performance N-Channel power MOSFET produced by Nexperia USA Inc. This device is designed for automotive and industrial applications, offering a robust and reliable solution for power management. The PMV120ENEAR features a compact TO-236AB surface mount package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current at Ta)2.1 A
RDS(on) (On-State Drain-Source Resistance)0.096 Ω
PD(Ta) (Total Power Dissipation at Ta)513 mW
PD(Tc) (Total Power Dissipation at Tc)6.4 W
PackageTO-236AB (Surface Mount)

Key Features

  • High drain current capability of 2.1 A at ambient temperature.
  • Low on-state drain-source resistance (RDS(on)) of 0.096 Ω.
  • Compact TO-236AB surface mount package for space-efficient designs.
  • High voltage rating of 60 V, suitable for various power management applications.
  • Designed for automotive and industrial use, ensuring reliability and durability.

Applications

The PMV120ENEAR is versatile and can be used in a variety of applications, including:

  • Automotive systems: Such as power steering, anti-lock braking systems (ABS), and other automotive power management systems.
  • Industrial power management: Including motor control, power supplies, and other industrial automation systems.
  • Consumer electronics: Where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV120ENEAR?
    The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current (ID) at ambient temperature?
    The continuous drain current at ambient temperature is 2.1 A.
  3. What is the on-state drain-source resistance (RDS(on)) of the PMV120ENEAR?
    The on-state drain-source resistance is 0.096 Ω.
  4. What is the total power dissipation at ambient temperature (PD(Ta))?
    The total power dissipation at ambient temperature is 513 mW.
  5. What is the package type of the PMV120ENEAR?
    The package type is TO-236AB (Surface Mount).
  6. Is the PMV120ENEAR suitable for automotive applications?
    Yes, it is designed for automotive and industrial applications.
  7. What are some common applications of the PMV120ENEAR?
    Common applications include automotive systems, industrial power management, and consumer electronics.
  8. Does the PMV120ENEAR contain any PFAS?
    No, it does not contain any intentionally added per- and polyfluoroalkyl substances (PFAS).
  9. What is the environmental friendly use period (EFUP) of the PMV120ENEAR?
    The PMV120ENEAR has an indefinite environmental friendly use period (EFUP).
  10. Where can I purchase the PMV120ENEAR?
    You can purchase the PMV120ENEAR from various electronic component distributors such as Digi-Key, Farnell, and Utmel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:123mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):513mW (Ta), 6.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV120ENEAR PMV130ENEAR PMV100ENEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) 2.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 2.1A, 10V 120mOhm @ 1.5A, 10V 72mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V 3.6 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 30 V 170 pF @ 20 V 160 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 513mW (Ta), 6.4W (Tc) 460mW (Ta), 5W (Tc) 460mW (Ta), 4.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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