PMPB27EP,115
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Nexperia USA Inc. PMPB27EP,115

Manufacturer No:
PMPB27EP,115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
30 V, SINGLE P-CHANNEL TRENCH MO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB27EP,115 is a 30 V, single P-channel Trench MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's advanced Trench MOSFET technology and is packaged in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. The compact and ultra-thin design (2 x 2 x 0.65 mm) makes it ideal for space-constrained applications. The exposed drain pad enhances thermal conduction, and the tin-plated side pads facilitate optical solder inspection.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) V GS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) R DSon [max] @ V GS = 4.5 V; @25 C (mΩ) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 10 V (nC) P tot [max] (W) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF)
PMPB27EP SOT1220 DFN2020MD-6 Production P 1 -30 20 29 43 150 -8.8 3.8 19 1.7 -1.5 N 1070 120

Key Features

  • Trench MOSFET technology: Enhances performance and efficiency.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm, ideal for space-constrained applications.
  • Exposed drain pad: Excellent thermal conduction.
  • Tin-plated 100 % solderable side pads: Facilitates optical solder inspection.

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portable devices
  • Hard disk and computing power management

Q & A

  1. What is the maximum drain-source voltage (V DS) of the PMPB27EP?

    The maximum drain-source voltage (V DS) is -30 V.

  2. What is the package type of the PMPB27EP?

    The package type is DFN2020MD-6 (SOT1220), a leadless medium power SMD plastic package.

  3. What is the maximum drain current (I D) of the PMPB27EP?

    The maximum drain current (I D) is -8.8 A.

  4. What are the key features of the PMPB27EP?

    The key features include Trench MOSFET technology, a small and leadless ultra-thin SMD package, an exposed drain pad for thermal conduction, and tin-plated solderable side pads.

  5. What are some common applications of the PMPB27EP?

    Common applications include charging switches for portable devices, DC-to-DC converters, power management in battery-driven portable devices, and hard disk and computing power management.

  6. Is the PMPB27EP automotive qualified?

    No, the PMPB27EP is not automotive qualified.

  7. What is the maximum junction temperature (T j) of the PMPB27EP?

    The maximum junction temperature (T j) is 150 °C.

  8. How does the exposed drain pad benefit the PMPB27EP?

    The exposed drain pad enhances thermal conduction, improving the device's thermal performance.

  9. What is the typical gate-source threshold voltage (V GSth) of the PMPB27EP?

    The typical gate-source threshold voltage (V GSth) is -1.5 V.

  10. Where can I find detailed documentation and datasheets for the PMPB27EP?

    Detailed documentation and datasheets can be found on Nexperia's official website and through authorized distributors like Mouser Electronics and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:29mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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