PMPB10XNEZ
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Nexperia USA Inc. PMPB10XNEZ

Manufacturer No:
PMPB10XNEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB10XNEZ is a 20 V, single N-channel Trench MOSFET produced by Nexperia USA Inc. This device is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-efficiency and reliability in various electronic applications.

Key Specifications

ParameterValue
Type numberPMPB10XNE
PackageSOT1220 (DFN2020MD-6)
Channel typeN-channel
Number of transistors1
VDS [max] (V)20
VGS [max] (V)12
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)14
RDSon [max] @ VGS = 2.5 V (mΩ)18
VESD (kV)2.2
Tj [max] (°C)150
ID [max] (A)12.9
QGD [typ] (nC)4.5
QG(tot) [typ] @ VGS = 4.5 V (nC)23
Ptot [max] (W)1.7
VGSth [typ] (V)0.65

Key Features

  • 2.2 kV ESD protection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated, 100% solderable side pads for optical solder inspection
  • Trench MOSFET technology for high efficiency and reliability

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMPB10XNEZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the PMPB10XNEZ?
    The package type is SOT1220 (DFN2020MD-6).
  3. What is the ESD protection rating of the PMPB10XNEZ?
    The ESD protection rating is 2.2 kV.
  4. What is the maximum junction temperature (Tj) of the PMPB10XNEZ?
    The maximum junction temperature (Tj) is 150°C.
  5. What are some common applications of the PMPB10XNEZ?
    Common applications include charging switches for portable devices, DC-to-DC converters, power management in battery-driven portables, and hard disk and computing power management.
  6. What technology is used in the PMPB10XNEZ?
    The PMPB10XNEZ uses Trench MOSFET technology.
  7. How does the exposed drain pad benefit the PMPB10XNEZ?
    The exposed drain pad provides excellent thermal conduction.
  8. Is the PMPB10XNEZ suitable for automotive applications?
    No, it is not specifically listed as automotive qualified.
  9. What is the maximum drain current (ID) of the PMPB10XNEZ?
    The maximum drain current (ID) is 12.9 A.
  10. How can I obtain samples of the PMPB10XNEZ?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Same Series
PMPB10XNE,115
PMPB10XNE,115
MOSFET N-CH 20V 9A DFN2020MD-6

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