PMPB10XNEZ
  • Share:

Nexperia USA Inc. PMPB10XNEZ

Manufacturer No:
PMPB10XNEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB10XNEZ is a 20 V, single N-channel Trench MOSFET produced by Nexperia USA Inc. This device is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-efficiency and reliability in various electronic applications.

Key Specifications

ParameterValue
Type numberPMPB10XNE
PackageSOT1220 (DFN2020MD-6)
Channel typeN-channel
Number of transistors1
VDS [max] (V)20
VGS [max] (V)12
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)14
RDSon [max] @ VGS = 2.5 V (mΩ)18
VESD (kV)2.2
Tj [max] (°C)150
ID [max] (A)12.9
QGD [typ] (nC)4.5
QG(tot) [typ] @ VGS = 4.5 V (nC)23
Ptot [max] (W)1.7
VGSth [typ] (V)0.65

Key Features

  • 2.2 kV ESD protection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated, 100% solderable side pads for optical solder inspection
  • Trench MOSFET technology for high efficiency and reliability

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMPB10XNEZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the PMPB10XNEZ?
    The package type is SOT1220 (DFN2020MD-6).
  3. What is the ESD protection rating of the PMPB10XNEZ?
    The ESD protection rating is 2.2 kV.
  4. What is the maximum junction temperature (Tj) of the PMPB10XNEZ?
    The maximum junction temperature (Tj) is 150°C.
  5. What are some common applications of the PMPB10XNEZ?
    Common applications include charging switches for portable devices, DC-to-DC converters, power management in battery-driven portables, and hard disk and computing power management.
  6. What technology is used in the PMPB10XNEZ?
    The PMPB10XNEZ uses Trench MOSFET technology.
  7. How does the exposed drain pad benefit the PMPB10XNEZ?
    The exposed drain pad provides excellent thermal conduction.
  8. Is the PMPB10XNEZ suitable for automotive applications?
    No, it is not specifically listed as automotive qualified.
  9. What is the maximum drain current (ID) of the PMPB10XNEZ?
    The maximum drain current (ID) is 12.9 A.
  10. How can I obtain samples of the PMPB10XNEZ?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.52
439

Please send RFQ , we will respond immediately.

Same Series
PMPB10XNE,115
PMPB10XNE,115
MOSFET N-CH 20V 9A DFN2020MD-6

Related Product By Categories

STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB

Related Product By Brand

PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
BAS116H
BAS116H
Nexperia USA Inc.
NOW NEXPERIA BAS116H - RECTIFIER
PESD5V0U1UL315
PESD5V0U1UL315
Nexperia USA Inc.
NOW NEXPERIA PESD5V0U1UL TRANS V