Overview
The PMPB10XNEAX is a 20 V, N-channel Trench MOSFET produced by Nexperia USA Inc. This device is an automotive-qualified, enhancement mode Field-Effect Transistor (FET) packaged in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. It utilizes Trench MOSFET technology, known for its high efficiency and reliability. The device is designed for various applications requiring low power consumption and high performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PMPB10XNEA | - |
| Package | DFN2020MD-6 (SOT1220) | - |
| Channel Type | N-channel | - |
| VDS [max] | 20 | V |
| VGS [max] | 12 | V |
| RDSon [max] @ VGS = 4.5 V; @25°C | 14 | mΩ |
| RDSon [max] @ VGS = 2.5 V | 18 | mΩ |
| Tj [max] | 150 | °C |
| ID [max] | 9 | A |
| Ptot [max] | 1.7 | W |
| VGSth [typ] | 0.65 | V |
| ESD Protection | > 1 kV HBM (class H1C) | - |
| Automotive Qualified | Yes (AEC-Q101) | - |
Key Features
- Trench MOSFET Technology: Offers high efficiency and reliability.
- Low Threshold Voltage: Enhances switching performance.
- Side Wettable Flanks: Allows for optical solder inspection.
- ESD Protection: > 1 kV HBM (class H1C) for robustness against electrostatic discharge.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Small and Leadless Package: DFN2020MD-6 (SOT1220) package with dimensions 2 x 2 x 0.65 mm.
- Exposed Drain Pad: Excellent thermal conduction.
- Tin-plated, 100% Solderable Side Pads: Ensures reliable soldering.
Applications
- Relay Driver: Suitable for driving relays in various systems.
- High-Speed Line Driver: Ideal for high-speed switching applications.
- Low-Side Load Switch: Used in load switching circuits.
- Switching Circuits: General-purpose switching applications.
- DC-to-DC Converters: Used in power management for battery-driven devices.
- Power Management in Battery-Driven Portables: Efficient power management in portable devices.
- Hard Disk and Computing Power Management: Used in power management for computing and storage devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMPB10XNEAX?
The maximum drain-source voltage (VDS) is 20 V.
- What is the package type of the PMPB10XNEAX?
The package type is DFN2020MD-6 (SOT1220).
- Is the PMPB10XNEAX automotive qualified?
Yes, it is AEC-Q101 qualified.
- What is the maximum drain current (ID) of the PMPB10XNEAX?
The maximum drain current (ID) is 9 A.
- What is the typical threshold voltage (VGSth) of the PMPB10XNEAX?
The typical threshold voltage (VGSth) is 0.65 V.
- Does the PMPB10XNEAX have ESD protection?
Yes, it has > 1 kV HBM (class H1C) ESD protection.
- What are some common applications of the PMPB10XNEAX?
Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
- How does the Trench MOSFET technology benefit the PMPB10XNEAX?
Trench MOSFET technology enhances efficiency and reliability.
- What is the maximum junction temperature (Tj) of the PMPB10XNEAX?
The maximum junction temperature (Tj) is 150°C.
- Is the PMPB10XNEAX suitable for high-speed switching applications?
Yes, it is suitable for high-speed switching applications due to its low RDSon and high efficiency.
