PH5030AL115
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Nexperia USA Inc. PH5030AL115

Manufacturer No:
PH5030AL115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PH5030AL,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS™ series, known for its advanced technology and robust performance. The PH5030AL,115 is designed for high-power applications, offering a continuous drain current of 91A at 25°C and a drain to source voltage (Vdss) of 30V. Despite being marked as obsolete, it remains a significant component in various legacy systems and applications requiring high current handling and low on-resistance.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
PackageLFPAK56, Power-SO8
Mounting TypeSurface Mount
Package / CaseSC-100, SOT-669
Vgs(th) (Max) @ Id2.15V @ 1mA
Rds On (Max) @ Id, Vgs5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1760 pF @ 12 V
Current - Continuous Drain (Id) @ 25°C91A (Tc)

Key Features

  • High continuous drain current of 91A at 25°C.
  • Low on-resistance (Rds On) of 5mOhm at 15A and 10V.
  • Logic level gate drive for easy control.
  • Advanced TrenchMOS™ technology for improved performance and reliability.
  • Surface mount package (LFPAK56, Power-SO8) for compact design.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The PH5030AL,115 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power systems.
  • Legacy systems where this specific part is still required.

Q & A

  1. What is the continuous drain current of the PH5030AL,115?
    The continuous drain current is 91A at 25°C.
  2. What is the maximum drain to source voltage (Vdss) of the PH5030AL,115?
    The maximum Vdss is 30V.
  3. What is the on-resistance (Rds On) of the PH5030AL,115?
    The Rds On is 5mOhm at 15A and 10V.
  4. Is the PH5030AL,115 RoHS compliant?
    Yes, the PH5030AL,115 is RoHS compliant.
  5. What is the gate charge (Qg) of the PH5030AL,115?
    The gate charge is 29 nC at 10 V.
  6. What is the input capacitance (Ciss) of the PH5030AL,115?
    The input capacitance is 1760 pF at 12 V.
  7. What is the mounting type of the PH5030AL,115?
    The mounting type is surface mount.
  8. What package types are available for the PH5030AL,115?
    The package types are LFPAK56 and Power-SO8.
  9. Is the PH5030AL,115 still in production?
    No, the PH5030AL,115 is marked as obsolete.
  10. What technology is used in the PH5030AL,115?
    The PH5030AL,115 uses TrenchMOS™ technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:91A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1760 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PH5030AL115 PH9030AL115 PH5030AL,115
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 91A (Tc) 61A (Tc) 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 5mOhm @ 15A, 10V 8mOhm @ 15A, 10V 5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 17.8 nC @ 10 V 29 nC @ 10 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 1760 pF @ 12 V 1006 pF @ 12 V 1760 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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