NX3008NBKMB,315
  • Share:

Nexperia USA Inc. NX3008NBKMB,315

Manufacturer No:
NX3008NBKMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 530MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKMB,315 is an N-Channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a 3-XFDFN (3-pin, extremely thin, dual flat no-lead) package. It is designed for high-performance applications requiring low power consumption and fast switching times.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number NX3008NBKMB,315
Package 3-XFDFN
Continuous Drain Current (Id) @ 25°C 530 mA
Gate to Source Voltage (Vgs) ±8 V
Power Dissipation (Max) 360 mW (Ta), 2.7 W (Tc)
On-Resistance (Rds On) @ Vgs = 4.5 V 1.4 Ω @ 350 mA
Input Capacitance (Ciss) @ 15 V 50 pF
Output Capacitance (Coss) @ 15 V Not specified
Gate Charge (Qg) @ 4.5 V 0.68 nC
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Fast Switching: The NX3008NBKMB,315 offers very fast switching times, making it suitable for high-frequency applications.
  • Low Threshold Voltage: It has a low threshold voltage, which enhances its performance in low-power applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved efficiency and reliability.
  • ESD Protection: Provides ESD protection up to 2 kV, ensuring robustness against electrostatic discharges.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, making it suitable for automotive applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control: Used in industrial control systems for its reliability and fast switching capabilities.
  • Power Management: Ideal for power management circuits, including relay drivers and low-side load switches.
  • Consumer Electronics: Found in consumer electronics for its efficiency and low power consumption.

Q & A

  1. What is the package type of the NX3008NBKMB,315?

    The package type is 3-XFDFN (3-pin, extremely thin, dual flat no-lead).

  2. What is the maximum continuous drain current of the NX3008NBKMB,315?

    The maximum continuous drain current is 530 mA at 25°C.

  3. What is the gate to source voltage range for the NX3008NBKMB,315?

    The gate to source voltage range is ±8 V.

  4. Is the NX3008NBKMB,315 RoHS compliant?

    Yes, it is ROHS3 compliant.

  5. What is the maximum power dissipation of the NX3008NBKMB,315?

    The maximum power dissipation is 360 mW (Ta) and 2.7 W (Tc).

  6. What technology does the NX3008NBKMB,315 use?

    It uses Trench MOSFET technology.

  7. Does the NX3008NBKMB,315 have ESD protection?

    Yes, it provides ESD protection up to 2 kV.

  8. Is the NX3008NBKMB,315 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What are some common applications of the NX3008NBKMB,315?

    It is used in automotive systems, industrial control, power management, and consumer electronics.

  10. What is the on-resistance of the NX3008NBKMB,315 at Vgs = 4.5 V?

    The on-resistance is 1.4 Ω at 350 mA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.35
2,177

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008NBKMB,315 NX3008PBKMB,315
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case 3-XFDFN SC-101, SOT-883

Related Product By Categories

BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
HEF4020BT,653
HEF4020BT,653
Nexperia USA Inc.
IC COUNTER BINARY 14STAGE 16SOIC
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR