NX3008NBKMB,315
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Nexperia USA Inc. NX3008NBKMB,315

Manufacturer No:
NX3008NBKMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 530MA DFN1006B-3
Delivery:
Payment:
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Product Introduction

Overview

The NX3008NBKMB,315 is an N-Channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a 3-XFDFN (3-pin, extremely thin, dual flat no-lead) package. It is designed for high-performance applications requiring low power consumption and fast switching times.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number NX3008NBKMB,315
Package 3-XFDFN
Continuous Drain Current (Id) @ 25°C 530 mA
Gate to Source Voltage (Vgs) ±8 V
Power Dissipation (Max) 360 mW (Ta), 2.7 W (Tc)
On-Resistance (Rds On) @ Vgs = 4.5 V 1.4 Ω @ 350 mA
Input Capacitance (Ciss) @ 15 V 50 pF
Output Capacitance (Coss) @ 15 V Not specified
Gate Charge (Qg) @ 4.5 V 0.68 nC
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Fast Switching: The NX3008NBKMB,315 offers very fast switching times, making it suitable for high-frequency applications.
  • Low Threshold Voltage: It has a low threshold voltage, which enhances its performance in low-power applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved efficiency and reliability.
  • ESD Protection: Provides ESD protection up to 2 kV, ensuring robustness against electrostatic discharges.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, making it suitable for automotive applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control: Used in industrial control systems for its reliability and fast switching capabilities.
  • Power Management: Ideal for power management circuits, including relay drivers and low-side load switches.
  • Consumer Electronics: Found in consumer electronics for its efficiency and low power consumption.

Q & A

  1. What is the package type of the NX3008NBKMB,315?

    The package type is 3-XFDFN (3-pin, extremely thin, dual flat no-lead).

  2. What is the maximum continuous drain current of the NX3008NBKMB,315?

    The maximum continuous drain current is 530 mA at 25°C.

  3. What is the gate to source voltage range for the NX3008NBKMB,315?

    The gate to source voltage range is ±8 V.

  4. Is the NX3008NBKMB,315 RoHS compliant?

    Yes, it is ROHS3 compliant.

  5. What is the maximum power dissipation of the NX3008NBKMB,315?

    The maximum power dissipation is 360 mW (Ta) and 2.7 W (Tc).

  6. What technology does the NX3008NBKMB,315 use?

    It uses Trench MOSFET technology.

  7. Does the NX3008NBKMB,315 have ESD protection?

    Yes, it provides ESD protection up to 2 kV.

  8. Is the NX3008NBKMB,315 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What are some common applications of the NX3008NBKMB,315?

    It is used in automotive systems, industrial control, power management, and consumer electronics.

  10. What is the on-resistance of the NX3008NBKMB,315 at Vgs = 4.5 V?

    The on-resistance is 1.4 Ω at 350 mA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
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In Stock

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Similar Products

Part Number NX3008NBKMB,315 NX3008PBKMB,315
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case 3-XFDFN SC-101, SOT-883

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