NX3008PBKMB,315
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NXP USA Inc. NX3008PBKMB,315

Manufacturer No:
NX3008PBKMB,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET P-CH 30V 300MA DFN1006B-3
Delivery:
Payment:
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Product Introduction

Overview

The NX3008PBKMB,315 is a 30 V, single P-channel Trench MOSFET produced by Nexperia (formerly part of NXP Semiconductors). This device is designed in an ultra-small DFN1006B-3 (SOT883B) surface-mount package, making it ideal for applications where space is limited. The MOSFET features Trench technology, which enhances its switching performance and reduces on-resistance. It is also RoHS compliant and lead-free, ensuring environmental sustainability.

Key Specifications

Parameter Value Unit
Part Number NX3008PBKMB,315 -
Manufacturer Nexperia -
Description MOSFET P-CH 30V 300MA 3DFN -
Vgs(th) (Max) @ Id 1.1V @ 250µA V @ A
Vgs (Max) ±8V V
Rds On (Max) @ Id, Vgs 4.1 Ohm @ 200mA, 4.5V Ohm @ A, V
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) mW, W
Package / Case 3-XFDFN (DFN1006B-3) -
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Surface Mount -
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 15V pF @ V
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V nC @ V
FET Type P-Channel -
Drain to Source Voltage (Vdss) 30V V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) mA

Key Features

  • Very fast switching: The NX3008PBKMB,315 features fast switching times, making it suitable for high-speed applications.
  • Low threshold voltage: With a low threshold voltage, this MOSFET can be easily driven by low-voltage logic circuits.
  • Trench MOSFET technology: This technology enhances the device's performance by reducing on-resistance and improving switching characteristics.
  • ESD protection up to 2 kV: The device includes built-in ESD protection to safeguard against electrical overstress.
  • Ultra thin package profile: The DFN1006B-3 package has a height of only 0.37 mm, making it ideal for space-constrained designs.

Applications

  • Relay driver: Suitable for driving relays in various control systems.
  • High-speed line driver: Ideal for applications requiring fast signal transmission.
  • High-side load switch: Can be used to control high-side loads in power management circuits.
  • Switching circuits: Applicable in a variety of switching circuits where fast and efficient switching is required.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the NX3008PBKMB,315?

    The maximum drain-to-source voltage (Vdss) is 30V.

  2. What is the package type of the NX3008PBKMB,315?

    The package type is DFN1006B-3 (SOT883B).

  3. What is the maximum continuous drain current (Id) at 25°C?

    The maximum continuous drain current (Id) at 25°C is 300mA.

  4. Does the NX3008PBKMB,315 have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  5. What is the operating temperature range of the NX3008PBKMB,315?

    The operating temperature range is -55°C to 150°C (TJ).

  6. Is the NX3008PBKMB,315 RoHS compliant?

    Yes, it is RoHS compliant and lead-free.

  7. What is the typical gate charge (Qg) at Vgs = 4.5V?

    The typical gate charge (Qg) at Vgs = 4.5V is 0.72nC.

  8. What are some common applications of the NX3008PBKMB,315?

    Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  9. What is the maximum power dissipation of the NX3008PBKMB,315?

    The maximum power dissipation is 360mW (Ta) and 2.7W (Tc).

  10. What is the input capacitance (Ciss) at Vds = 15V?

    The input capacitance (Ciss) at Vds = 15V is 46pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:SC-101, SOT-883
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Similar Products

Part Number NX3008PBKMB,315 NX3008NBKMB,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 50 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

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