NX3008PBKMB,315
  • Share:

NXP USA Inc. NX3008PBKMB,315

Manufacturer No:
NX3008PBKMB,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET P-CH 30V 300MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008PBKMB,315 is a 30 V, single P-channel Trench MOSFET produced by Nexperia (formerly part of NXP Semiconductors). This device is designed in an ultra-small DFN1006B-3 (SOT883B) surface-mount package, making it ideal for applications where space is limited. The MOSFET features Trench technology, which enhances its switching performance and reduces on-resistance. It is also RoHS compliant and lead-free, ensuring environmental sustainability.

Key Specifications

Parameter Value Unit
Part Number NX3008PBKMB,315 -
Manufacturer Nexperia -
Description MOSFET P-CH 30V 300MA 3DFN -
Vgs(th) (Max) @ Id 1.1V @ 250µA V @ A
Vgs (Max) ±8V V
Rds On (Max) @ Id, Vgs 4.1 Ohm @ 200mA, 4.5V Ohm @ A, V
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) mW, W
Package / Case 3-XFDFN (DFN1006B-3) -
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Surface Mount -
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 15V pF @ V
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V nC @ V
FET Type P-Channel -
Drain to Source Voltage (Vdss) 30V V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) mA

Key Features

  • Very fast switching: The NX3008PBKMB,315 features fast switching times, making it suitable for high-speed applications.
  • Low threshold voltage: With a low threshold voltage, this MOSFET can be easily driven by low-voltage logic circuits.
  • Trench MOSFET technology: This technology enhances the device's performance by reducing on-resistance and improving switching characteristics.
  • ESD protection up to 2 kV: The device includes built-in ESD protection to safeguard against electrical overstress.
  • Ultra thin package profile: The DFN1006B-3 package has a height of only 0.37 mm, making it ideal for space-constrained designs.

Applications

  • Relay driver: Suitable for driving relays in various control systems.
  • High-speed line driver: Ideal for applications requiring fast signal transmission.
  • High-side load switch: Can be used to control high-side loads in power management circuits.
  • Switching circuits: Applicable in a variety of switching circuits where fast and efficient switching is required.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the NX3008PBKMB,315?

    The maximum drain-to-source voltage (Vdss) is 30V.

  2. What is the package type of the NX3008PBKMB,315?

    The package type is DFN1006B-3 (SOT883B).

  3. What is the maximum continuous drain current (Id) at 25°C?

    The maximum continuous drain current (Id) at 25°C is 300mA.

  4. Does the NX3008PBKMB,315 have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  5. What is the operating temperature range of the NX3008PBKMB,315?

    The operating temperature range is -55°C to 150°C (TJ).

  6. Is the NX3008PBKMB,315 RoHS compliant?

    Yes, it is RoHS compliant and lead-free.

  7. What is the typical gate charge (Qg) at Vgs = 4.5V?

    The typical gate charge (Qg) at Vgs = 4.5V is 0.72nC.

  8. What are some common applications of the NX3008PBKMB,315?

    Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  9. What is the maximum power dissipation of the NX3008PBKMB,315?

    The maximum power dissipation is 360mW (Ta) and 2.7W (Tc).

  10. What is the input capacitance (Ciss) at Vds = 15V?

    The input capacitance (Ciss) at Vds = 15V is 46pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

$0.03
17,102

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008PBKMB,315 NX3008NBKMB,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 50 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
PCA9575PW1,118
PCA9575PW1,118
NXP USA Inc.
IC I/O EXPANDER I2C 16B 24TSSOP
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
NX5P3001UKZ
NX5P3001UKZ
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 12WLCSP
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO