BUK9Y59-60E,115
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Nexperia USA Inc. BUK9Y59-60E,115

Manufacturer No:
BUK9Y59-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 16.7A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK9Y59-60E,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK56 series and is designed for high-power applications requiring low on-state resistance and high current handling. The MOSFET features a surface mount LFPAK56 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)16.7 A (at Tc)
RDS(on) (On-State Resistance)59 mΩ
Ptot (Total Power Dissipation)37 W (at Tc)
PackageLFPAK56, Power-SO8
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance (RDS(on)) of 59 mΩ, reducing power losses.
  • High continuous drain current (ID) of 16.7 A at Tc.
  • High total power dissipation (Ptot) of 37 W at Tc.
  • Logic level gate drive for easy control.
  • Surface mount LFPAK56 package for compact and efficient design.

Applications

The BUK9Y59-60E,115 MOSFET is suitable for a wide range of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, such as battery management and power distribution.
  • Renewable energy systems, including solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the BUK9Y59-60E,115?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating of the BUK9Y59-60E,115?
    The continuous drain current (ID) is 16.7 A at Tc.
  3. What is the on-state resistance of the BUK9Y59-60E,115?
    The on-state resistance (RDS(on)) is 59 mΩ.
  4. What is the total power dissipation of the BUK9Y59-60E,115?
    The total power dissipation (Ptot) is 37 W at Tc.
  5. What package type does the BUK9Y59-60E,115 use?
    The BUK9Y59-60E,115 uses the LFPAK56, Power-SO8 package.
  6. What is the operating temperature range of the BUK9Y59-60E,115?
    The operating temperature range is -55°C to 150°C.
  7. Is the BUK9Y59-60E,115 suitable for automotive applications?
    Yes, it is suitable for automotive systems, including battery management and power distribution.
  8. Can the BUK9Y59-60E,115 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power.
  9. What are some common applications for the BUK9Y59-60E,115?
    Common applications include power supplies, DC-DC converters, motor control, industrial automation, and automotive systems.
  10. Is the BUK9Y59-60E,115 easy to control?
    Yes, it features logic level gate drive, making it easy to control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:715 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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