Overview
The BUK9Y3R0-40E/DMANX is an N-channel MOSFET produced by Nexperia USA Inc., designed for high-performance applications. This MOSFET is qualified to the AEC-Q101 standard, making it suitable for use in automotive and other demanding environments. It features a low on-state resistance and is optimized for logic level gate drive, enhancing its efficiency and reliability in various electronic systems.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| RDS(on) (On-State Resistance) | 3.0 mΩ |
| ID (Continuous Drain Current) | 120 A |
| VGS(th) (Threshold Voltage) | 1-2 V |
| Tj (Junction Temperature) | -55 to 175 °C |
| Package | TO-263 (D2PAK) |
Key Features
- Low on-state resistance of 3.0 mΩ, reducing power losses and improving efficiency.
- Logic level gate drive, allowing for easier control and integration with microcontrollers and other logic-level devices.
- AEC-Q101 qualified, ensuring reliability and performance in automotive and other high-demand applications.
- High continuous drain current of 120 A, suitable for high-power applications.
- Wide junction temperature range of -55 to 175 °C, enhancing reliability in diverse operating conditions.
Applications
The BUK9Y3R0-40E/DMANX MOSFET is designed for use in high-performance automotive applications, including but not limited to:
- Power management systems.
- Motor control and drive systems.
- Battery management systems.
- High-power switching applications.
Q & A
- What is the maximum drain-source voltage of the BUK9Y3R0-40E/DMANX MOSFET? The maximum drain-source voltage is 40 V.
- What is the on-state resistance of the BUK9Y3R0-40E/DMANX MOSFET? The on-state resistance is 3.0 mΩ.
- What is the continuous drain current of the BUK9Y3R0-40E/DMANX MOSFET? The continuous drain current is 120 A.
- Is the BUK9Y3R0-40E/DMANX MOSFET suitable for automotive applications? Yes, it is AEC-Q101 qualified for use in high-performance automotive applications.
- What is the junction temperature range of the BUK9Y3R0-40E/DMANX MOSFET? The junction temperature range is -55 to 175 °C.
- What type of gate drive does the BUK9Y3R0-40E/DMANX MOSFET require? It requires logic level gate drive.
- What package type is the BUK9Y3R0-40E/DMANX MOSFET available in? It is available in the TO-263 (D2PAK) package.
- What are some common applications of the BUK9Y3R0-40E/DMANX MOSFET? Common applications include power management systems, motor control and drive systems, battery management systems, and high-power switching applications.
- Where can I find detailed specifications for the BUK9Y3R0-40E/DMANX MOSFET? Detailed specifications can be found in the datasheet available on Nexperia's official website and other electronic component distributors like Digi-Key.
- Is the BUK9Y3R0-40E/DMANX MOSFET reliable in high-temperature environments? Yes, it is designed to operate reliably in a wide junction temperature range of -55 to 175 °C.
