BUK9Y30-75B,115
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Nexperia USA Inc. BUK9Y30-75B,115

Manufacturer No:
BUK9Y30-75B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 34A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK9Y30-75B,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family and is specifically designed for automotive and industrial applications. It is packaged in the LFPAK56 and Power-SO8 formats, which are known for their robust and reliable design. The MOSFET is qualified according to the AEC-Q101 standard, ensuring its suitability for demanding automotive environments. It operates across a wide temperature range of -55°C to 175°C, making it versatile for various applications.

Key Specifications

Parameter Value
FET Type N-Channel
Number of Channels 1
Drain to Source Voltage (Vdss) 75V
Maximum Gate-Source Voltage (Vgs(max)) ±15V
On-Resistance (Rds(on)) 28mΩ @ 15A, 10V
Continuous Drain Current (Id) 34A @ 25°C
Gate Charge (Qg) 19nC
Input Capacitance (Ciss) 1550pF @ 25V
Power Dissipation (Ptot) 85W @ Tc
Turn-on Delay Time 16ns
Turn-off Delay Time 51ns
Rise Time 106ns
Fall Time 83ns
Operating Temperature Range -55°C to +175°C
Gate Source Threshold 1.5V
Technology TrenchMOS
Package Style SOT-669 (LFPAK56, Power-SO8)
Mounting Method Surface Mount

Key Features

  • High Avalanche Capability: Ensures robust operation under high stress conditions.
  • Low On-Resistance: Provides high efficiency with a low Rds(on) of 28mΩ.
  • Low Gate Charge: Facilitates fast switching with a gate charge of 19nC.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for a variety of environments.
  • High Power Density: Optimized for high power applications with a power dissipation of 85W.
  • Excellent Thermal Performance: Designed to manage heat effectively, ensuring reliable operation.
  • RoHS3 Compliant: Meets environmental regulations regarding the use of hazardous substances.

Applications

  • Automotive Electronics: Suitable for various automotive systems due to its AEC-Q101 qualification and robust design.
  • Industrial Motor Drives: Used in motor control and drive systems where high efficiency and reliability are crucial.
  • Switched-Mode Power Supplies: Ideal for SMPS applications requiring high power density and fast switching.
  • Power Tools and Home Appliances: Used in power tools and home appliances where high performance and reliability are necessary.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9Y30-75B,115 MOSFET?

    The maximum drain to source voltage (Vdss) is 75V.

  2. What is the on-resistance (Rds(on)) of this MOSFET?

    The on-resistance (Rds(on)) is 28mΩ at 15A and 10V.

  3. What is the continuous drain current (Id) rating of this device?

    The continuous drain current (Id) is 34A at 25°C.

  4. Is the BUK9Y30-75B,115 MOSFET qualified for automotive applications?

    Yes, it is qualified according to the AEC-Q101 standard for automotive applications.

  5. What is the operating temperature range of this MOSFET?

    The operating temperature range is from -55°C to 175°C.

  6. What is the gate charge (Qg) of the BUK9Y30-75B,115?

    The gate charge (Qg) is 19nC.

  7. What package styles are available for this MOSFET?

    The MOSFET is available in LFPAK56 and Power-SO8 packages.

  8. Is the BUK9Y30-75B,115 RoHS3 compliant?

    Yes, it is RoHS3 compliant.

  9. What are some typical applications of the BUK9Y30-75B,115 MOSFET?

    Typical applications include automotive electronics, industrial motor drives, switched-mode power supplies, and power tools and home appliances.

  10. What is the power dissipation (Ptot) rating of this device?

    The power dissipation (Ptot) rating is 85W at Tc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Same Series
BUK9Y30-75B/C2,115
BUK9Y30-75B/C2,115
MOSFET N-CH 75V 34A LFPAK56

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