BUK9Y25-80E,115
  • Share:

Nexperia USA Inc. BUK9Y25-80E,115

Manufacturer No:
BUK9Y25-80E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 37A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y25-80E,115 is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. This device is designed for use in demanding environments, particularly in automotive and industrial applications. It features a robust design with a high current and power handling capability, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)80 V
ID (Continuous Drain Current at Tc)37 A
PD (Power Dissipation at Tc)95 W
VGS(th) (Threshold Voltage)2.0 - 4.0 V
RDS(on) (On-State Resistance)Typically 1.5 mΩ
TJ (Junction Temperature)-55 to +175°C
PackageLFPAK56, Power-SO8
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1

Key Features

  • High current and power handling capability, making it suitable for demanding applications.
  • Automotive-grade quality, designed for hostile operating environments.
  • High junction temperature rating of +175°C, suitable for thermally demanding environments.
  • Low on-state resistance (RDS(on)) of typically 1.5 mΩ, reducing power losses.
  • LFPAK56 and Power-SO8 packaging options for efficient thermal management and compact design.

Applications

The BUK9Y25-80E,115 MOSFET is ideal for various applications, including:

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power supplies and DC-DC converters.
  • Motor drives and control systems.
  • High-power switching and power management in general electronics.

Q & A

  1. What is the maximum drain-source voltage of the BUK9Y25-80E,115 MOSFET?
    The maximum drain-source voltage (VDS) is 80 V.
  2. What is the continuous drain current at Tc for this MOSFET?
    The continuous drain current at Tc is 37 A.
  3. What is the power dissipation at Tc for this device?
    The power dissipation at Tc is 95 W.
  4. What is the typical on-state resistance (RDS(on)) of the BUK9Y25-80E,115?
    The typical on-state resistance is 1.5 mΩ.
  5. What is the junction temperature range for this MOSFET?
    The junction temperature range is -55 to +175°C.
  6. Is the BUK9Y25-80E,115 RoHS compliant?
    Yes, it is ROHS3 compliant.
  7. What is the moisture sensitivity level (MSL) of this component?
    The moisture sensitivity level is 1.
  8. What are the packaging options for the BUK9Y25-80E,115?
    The packaging options are LFPAK56 and Power-SO8.
  9. What are some typical applications for the BUK9Y25-80E,115 MOSFET?
    Typical applications include automotive systems, industrial power supplies, motor drives, and high-power switching in general electronics.
  10. Why is the BUK9Y25-80E,115 suitable for automotive applications?
    It is designed for hostile operating environments and has a high junction temperature rating, making it suitable for automotive and other demanding applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:17.1 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2703 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.99
565

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK9Y25-80E,115 BUK9Y25-60E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V
Rds On (Max) @ Id, Vgs 27mOhm @ 10A, 5V 21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.1 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2703 pF @ 25 V 1500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 95W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO