BUK9Y25-80E,115
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Nexperia USA Inc. BUK9Y25-80E,115

Manufacturer No:
BUK9Y25-80E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 37A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK9Y25-80E,115 is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. This device is designed for use in demanding environments, particularly in automotive and industrial applications. It features a robust design with a high current and power handling capability, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)80 V
ID (Continuous Drain Current at Tc)37 A
PD (Power Dissipation at Tc)95 W
VGS(th) (Threshold Voltage)2.0 - 4.0 V
RDS(on) (On-State Resistance)Typically 1.5 mΩ
TJ (Junction Temperature)-55 to +175°C
PackageLFPAK56, Power-SO8
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1

Key Features

  • High current and power handling capability, making it suitable for demanding applications.
  • Automotive-grade quality, designed for hostile operating environments.
  • High junction temperature rating of +175°C, suitable for thermally demanding environments.
  • Low on-state resistance (RDS(on)) of typically 1.5 mΩ, reducing power losses.
  • LFPAK56 and Power-SO8 packaging options for efficient thermal management and compact design.

Applications

The BUK9Y25-80E,115 MOSFET is ideal for various applications, including:

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power supplies and DC-DC converters.
  • Motor drives and control systems.
  • High-power switching and power management in general electronics.

Q & A

  1. What is the maximum drain-source voltage of the BUK9Y25-80E,115 MOSFET?
    The maximum drain-source voltage (VDS) is 80 V.
  2. What is the continuous drain current at Tc for this MOSFET?
    The continuous drain current at Tc is 37 A.
  3. What is the power dissipation at Tc for this device?
    The power dissipation at Tc is 95 W.
  4. What is the typical on-state resistance (RDS(on)) of the BUK9Y25-80E,115?
    The typical on-state resistance is 1.5 mΩ.
  5. What is the junction temperature range for this MOSFET?
    The junction temperature range is -55 to +175°C.
  6. Is the BUK9Y25-80E,115 RoHS compliant?
    Yes, it is ROHS3 compliant.
  7. What is the moisture sensitivity level (MSL) of this component?
    The moisture sensitivity level is 1.
  8. What are the packaging options for the BUK9Y25-80E,115?
    The packaging options are LFPAK56 and Power-SO8.
  9. What are some typical applications for the BUK9Y25-80E,115 MOSFET?
    Typical applications include automotive systems, industrial power supplies, motor drives, and high-power switching in general electronics.
  10. Why is the BUK9Y25-80E,115 suitable for automotive applications?
    It is designed for hostile operating environments and has a high junction temperature rating, making it suitable for automotive and other demanding applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:17.1 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2703 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK9Y25-80E,115 BUK9Y25-60E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V
Rds On (Max) @ Id, Vgs 27mOhm @ 10A, 5V 21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.1 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2703 pF @ 25 V 1500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 95W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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