BUK9Y25-60E,115
  • Share:

Nexperia USA Inc. BUK9Y25-60E,115

Manufacturer No:
BUK9Y25-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 34A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y25-60E,115 is a high-performance N-Channel power MOSFET manufactured by Nexperia USA Inc. This device is designed for use in automotive and other thermally demanding environments, featuring a robust LFPAK56 package and a maximum operating temperature of +175°C. It is part of the AEC-Q101 qualified series, ensuring reliability and performance in harsh conditions.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)60 V
Continuous Drain Current (Id) @ 25°C34 A
On-Resistance (Rds On) @ Id, Vgs0.0183 ohm @ 10A, 5V
Power Dissipation (Max) @ Tc65 W
Gate Threshold Voltage (Vgs(th)) @ Id2.1 V @ 1 mA
Input Capacitance (Ciss) @ Vds2703 pF @ 25 V
Gate Charge (Qg) @ Vgs17.1 nC @ 5 V
Operating Temperature Range (TJ)-55°C ~ 175°C
Package / CaseLFPAK56, Power-SO8
Mounting TypeSurface Mount

Key Features

  • AEC-Q101 qualified for automotive applications, ensuring high reliability in harsh environments.
  • High continuous drain current of 34 A and high power dissipation of 65 W.
  • Low on-resistance of 0.0183 ohm, reducing energy losses.
  • Wide operating temperature range from -55°C to +175°C.
  • LFPAK56 package for efficient thermal management and compact design.

Applications

The BUK9Y25-60E,115 is suitable for a variety of applications, including:

  • Automotive systems such as power steering, braking, and engine management.
  • Industrial power supplies and motor control systems.
  • High-power switching and DC-DC converters.
  • Thermally demanding environments requiring robust and reliable MOSFET performance.

Q & A

  1. What is the maximum drain to source voltage of the BUK9Y25-60E,115?
    The maximum drain to source voltage is 60 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 34 A.
  3. What is the on-resistance of the MOSFET?
    The on-resistance is 0.0183 ohm at 10 A and 5 V.
  4. What is the maximum power dissipation?
    The maximum power dissipation is 65 W at Tc.
  5. What is the gate threshold voltage?
    The gate threshold voltage is 2.1 V at 1 mA.
  6. What is the operating temperature range?
    The operating temperature range is from -55°C to +175°C.
  7. What package type is used for the BUK9Y25-60E,115?
    The package type is LFPAK56, Power-SO8.
  8. Is the BUK9Y25-60E,115 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  9. What are the typical applications for this MOSFET?
    Typical applications include automotive systems, industrial power supplies, and high-power switching.
  10. What is the mounting type of the BUK9Y25-60E,115?
    The mounting type is surface mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.00
259

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK9Y25-60E,115 BUK9Y25-80E,115 BUK9Y15-60E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 37A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V, 10V 5V
Rds On (Max) @ Id, Vgs 21.5mOhm @ 10A, 10V 27mOhm @ 10A, 5V 13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 17.1 nC @ 5 V 17.2 nC @ 5 V
Vgs (Max) ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 2703 pF @ 25 V 2603 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 65W (Tc) 95W (Tc) 95W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC857CQAZ
BC857CQAZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12
PESD5V0U1UL315
PESD5V0U1UL315
Nexperia USA Inc.
NOW NEXPERIA PESD5V0U1UL TRANS V