Overview
The BUK9Y12-40E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS technology family and is designed and qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding applications.
The MOSFET is housed in the LFPAK56 (Power-SO8) package, which offers excellent thermal performance and a compact footprint. This makes it ideal for a wide range of applications where high power density and reliability are crucial.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | Tj ≥ 25 °C; Tj ≤ 175 °C | 40 | V | ||
| RDSon (On-State Resistance) @ VGS = 10 V | 10 | mΩ | |||
| RDSon (On-State Resistance) @ VGS = 5 V | 12 | mΩ | |||
| Tj (Junction Temperature) | 175 | °C | |||
| ID (Continuous Drain Current) @ 25 °C | 52 | A | |||
| QGD (Gate Drain Charge) @ VGS = 5 V | 3.4 | nC | |||
| Ptot (Total Power Dissipation) @ Tc | 65 | W | |||
| VGSth (Threshold Voltage) @ Id = 1 mA | 1.7 | V | |||
| Ciss (Input Capacitance) @ Vds = 25 V | 1067 | pF |
Key Features
- TrenchMOS Technology: Utilizes advanced TrenchMOS technology for high efficiency and low on-state resistance.
- AEC-Q101 Qualified: Designed and qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.
- LFPAK56 (Power-SO8) Package: Compact package with excellent thermal performance, suitable for high power density applications.
- Low On-State Resistance: RDSon of 10 mΩ at VGS = 10 V and 12 mΩ at VGS = 5 V, reducing power losses and improving overall efficiency.
- High Continuous Drain Current: Capable of handling up to 52 A of continuous drain current at 25 °C.
- Wide Operating Temperature Range: Junction temperature range from -55 °C to 175 °C, making it suitable for a variety of environmental conditions.
Applications
- Automotive Systems: Ideal for use in automotive systems such as power steering, braking, and engine management due to its AEC-Q101 qualification.
- Industrial Power Systems: Suitable for industrial power systems, including motor control, power supplies, and DC-DC converters.
- Consumer Electronics: Used in consumer electronics for applications requiring high power density and efficiency, such as power adapters and battery chargers.
- Power Management: Effective in power management circuits, including voltage regulators and switch-mode power supplies.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y12-40E,115 MOSFET?
The maximum drain-source voltage (VDS) is 40 V.
- What is the on-state resistance (RDSon) at VGS = 5 V?
The on-state resistance (RDSon) at VGS = 5 V is 12 mΩ.
- What is the maximum junction temperature (Tj) of the BUK9Y12-40E,115?
The maximum junction temperature (Tj) is 175 °C.
- What is the continuous drain current (ID) rating at 25 °C?
The continuous drain current (ID) rating at 25 °C is 52 A.
- Is the BUK9Y12-40E,115 qualified to any automotive standards?
Yes, it is qualified to the AEC-Q101 standard.
- What package type is the BUK9Y12-40E,115 available in?
The BUK9Y12-40E,115 is available in the LFPAK56 (Power-SO8) package.
- What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is 1.7 V.
- What is the maximum total power dissipation (Ptot)?
The maximum total power dissipation (Ptot) is 65 W.
- What are some common applications for the BUK9Y12-40E,115 MOSFET?
Common applications include automotive systems, industrial power systems, consumer electronics, and power management circuits.
- Where can I find detailed datasheets and technical support for the BUK9Y12-40E,115?
Detailed datasheets and technical support can be found on the Nexperia website or through authorized distributors.
