BUK9Y104-100B,115
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Nexperia USA Inc. BUK9Y104-100B,115

Manufacturer No:
BUK9Y104-100B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 14.8A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK9Y104-100B,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ series and is specifically designed for automotive applications, adhering to the AEC-Q101 standard. It is known for its robust performance in thermally demanding environments, with an operating temperature range of -55°C to 175°C.

This MOSFET features a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 14.8A at 25°C. The device is packaged in the LFPAK56 (Power-SO8) package, which is optimized for surface mount applications.

Key Specifications

Parameter Value Unit
Part Number BUK9Y104-100B,115
Manufacturer Nexperia
Description MOSFET N-CH 100V 14.8A LFPAK
Vgs(th) (Max) @ Id 2.15V @ 1mA
Vgs (Max) ±15V
Technology MOSFET (Metal Oxide)
Supplier Device Package LFPAK56, Power-SO8
Series Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs 99 mOhm @ 5A, 10V
Power Dissipation (Max) 59W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1139pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 14.8A (Tc)

Key Features

  • High Performance: The BUK9Y104-100B,115 offers high current handling of up to 14.8A and low on-resistance (Rds On) of 99 mOhm at 5A and 10V.
  • Automotive Grade: Compliant with AEC-Q101 standards, making it suitable for demanding automotive applications.
  • Thermal Robustness: Operates in a wide temperature range from -55°C to 175°C, ensuring reliability in harsh environments.
  • Surface Mount Package: Packaged in LFPAK56 (Power-SO8), which is optimized for surface mount applications and provides good thermal performance.
  • Lead-Free and RoHS Compliant: Ensures compliance with environmental regulations, making it a sustainable choice.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power management, motor control, and battery management systems.
  • Industrial Power Systems: Can be used in industrial power supplies, motor drives, and other high-power applications requiring robust and reliable MOSFETs.
  • Thermally Demanding Environments: Ideal for use in environments where high thermal performance is critical.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9Y104-100B,115?

    The maximum drain to source voltage (Vdss) is 100V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 14.8A.

  3. What is the operating temperature range of the BUK9Y104-100B,115?

    The operating temperature range is from -55°C to 175°C.

  4. Is the BUK9Y104-100B,115 compliant with automotive standards?

    Yes, it is compliant with AEC-Q101 standards.

  5. What package type is used for the BUK9Y104-100B,115?

    The device is packaged in LFPAK56 (Power-SO8).

  6. What is the maximum power dissipation (Pd) for this MOSFET?

    The maximum power dissipation (Pd) is 59W (Tc).

  7. Is the BUK9Y104-100B,115 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  8. What is the typical on-resistance (Rds On) of the BUK9Y104-100B,115?

    The typical on-resistance (Rds On) is 99 mOhm at 5A and 10V.

  9. What is the input capacitance (Ciss) of the BUK9Y104-100B,115?

    The input capacitance (Ciss) is 1139pF at 25V.

  10. What is the gate charge (Qg) of the BUK9Y104-100B,115?

    The gate charge (Qg) is 11nC at 5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:99mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1139 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):59W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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