BUK9E06-55A,127
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Nexperia USA Inc. BUK9E06-55A,127

Manufacturer No:
BUK9E06-55A,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 55V 75A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK9E06-55A,127 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This component is designed to meet the demanding requirements of various power management applications. It features a robust I2PAK package, which provides excellent thermal performance and reliability. The MOSFET is part of Nexperia's extensive portfolio of discrete semiconductor products, known for their high quality and reliability.

Key Specifications

AttributeDescription
Part NumberBUK9E06-55A,127
ManufacturerNexperia USA Inc.
Package TypeI2PAK
Voltage Rating (Vds)55 V
Current Rating (Id)75 A
Rds(on) (mΩ)Typically 5.8 mΩ at Vgs = 10 V, Id = 25 A
Gate Threshold Voltage (Vgs(th))Typically 2.5 V to 4 V
Moisture Sensitivity Level (MSL)1
RoHS StatusROHS3 Compliant

Key Features

  • High current capability of up to 75 A, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of typically 5.8 mΩ, which minimizes power losses and enhances efficiency.
  • Robust I2PAK package that offers good thermal performance and reliability.
  • Wide operating voltage range up to 55 V, providing flexibility in various power management scenarios.
  • Gate threshold voltage range of 2.5 V to 4 V, ensuring reliable switching characteristics.

Applications

  • Power management systems, including DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and electric vehicle applications.
  • Industrial power systems, including inverters and switch-mode power supplies.
  • Consumer electronics, such as power adapters and chargers.

Q & A

  1. What is the voltage rating of the BUK9E06-55A,127 MOSFET? The voltage rating (Vds) of the BUK9E06-55A,127 MOSFET is 55 V.
  2. What is the current rating of the BUK9E06-55A,127 MOSFET? The current rating (Id) of the BUK9E06-55A,127 MOSFET is 75 A.
  3. What is the typical on-resistance (Rds(on)) of the BUK9E06-55A,127 MOSFET? The typical on-resistance (Rds(on)) is 5.8 mΩ at Vgs = 10 V, Id = 25 A.
  4. What package type is used for the BUK9E06-55A,127 MOSFET? The BUK9E06-55A,127 MOSFET is packaged in an I2PAK package.
  5. Is the BUK9E06-55A,127 MOSFET RoHS compliant? Yes, the BUK9E06-55A,127 MOSFET is ROHS3 compliant.
  6. What is the moisture sensitivity level (MSL) of the BUK9E06-55A,127 MOSFET? The moisture sensitivity level (MSL) is 1.
  7. In which applications is the BUK9E06-55A,127 MOSFET commonly used? It is commonly used in power management systems, motor control, automotive systems, industrial power systems, and consumer electronics.
  8. What is the gate threshold voltage range of the BUK9E06-55A,127 MOSFET? The gate threshold voltage range is typically between 2.5 V and 4 V.
  9. Why is the I2PAK package used for the BUK9E06-55A,127 MOSFET? The I2PAK package is used for its good thermal performance and reliability.
  10. Can the BUK9E06-55A,127 MOSFET be used in high-temperature applications? Yes, it can be used in various high-temperature applications due to its robust design and packaging.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:8600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number BUK9E06-55A,127 BUK9E06-55B,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V 5.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 60 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 25 V 7565 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 258W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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