BUK9675-100A,118
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Nexperia USA Inc. BUK9675-100A,118

Manufacturer No:
BUK9675-100A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 23A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The BUK9675-100A,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a D2PAK (SOT404) plastic package. It is designed and qualified to the AEC Q101 standard, making it suitable for automotive critical applications as well as general-purpose power switching.

Key Specifications

Parameter Value Unit
Type Number BUK9675-100A -
Orderable Part Number BUK9675-100A,118 -
Package D2PAK (SOT404) -
VDS (Drain-Source Voltage) 100 V
VGS (Gate-Source Voltage) 20 V
ID (Continuous Drain Current) 72 A
RDS(on) (On-State Resistance) 1.5
Ptot (Total Power Dissipation) 175 W
Tj (Junction Temperature) 175 °C

Key Features

  • Low Conduction Losses: The BUK9675-100A,118 features low on-state resistance, reducing conduction losses and improving overall efficiency.
  • TrenchMOS Technology: Utilizes advanced TrenchMOS technology for enhanced performance and reliability.
  • AEC Q101 Compliant: Qualified to the AEC Q101 standard, making it suitable for automotive critical applications.
  • Logic Level Operation: Designed for logic level operation, allowing for easy interface with microcontrollers and other logic circuits.
  • High Current Capability: Supports a continuous drain current of up to 72 A, making it suitable for high-power applications.

Applications

The BUK9675-100A,118 is versatile and can be used in various applications, including:

  • Automotive Systems: Suitable for critical automotive applications due to its AEC Q101 compliance.
  • Power Switching: Ideal for general-purpose power switching in industrial and consumer electronics.
  • Industrial Control: Used in industrial control systems, motor drives, and power supplies.
  • Consumer Electronics: Found in various consumer electronics requiring high-power switching capabilities.

Q & A

  1. What is the BUK9675-100A,118?

    The BUK9675-100A,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.

  2. What package type does the BUK9675-100A,118 use?

    The device is packaged in a D2PAK (SOT404) plastic package.

  3. What is the maximum drain-source voltage (VDS) of the BUK9675-100A,118?

    The maximum drain-source voltage (VDS) is 100 V.

  4. What is the continuous drain current (ID) of the BUK9675-100A,118?

    The continuous drain current (ID) is 72 A.

  5. Is the BUK9675-100A,118 AEC Q101 compliant?

    Yes, the BUK9675-100A,118 is qualified to the AEC Q101 standard.

  6. What is the on-state resistance (RDS(on)) of the BUK9675-100A,118?

    The on-state resistance (RDS(on)) is 1.5 mΩ.

  7. In what types of applications is the BUK9675-100A,118 commonly used?

    It is commonly used in automotive systems, power switching, industrial control, and consumer electronics.

  8. How does the TrenchMOS technology benefit the BUK9675-100A,118?

    The TrenchMOS technology enhances the performance and reliability of the device by reducing conduction losses and improving overall efficiency.

  9. What is the maximum junction temperature (Tj) of the BUK9675-100A,118?

    The maximum junction temperature (Tj) is 175 °C.

  10. Where can I purchase the BUK9675-100A,118?

    The BUK9675-100A,118 can be purchased from various distributors such as Digi-Key, Mouser, and Nexperia's official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1704 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):99W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK9675-100A,118 BUK9615-100A,118 BUK9635-100A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 75A (Tc) 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 10A, 10V 14.4mOhm @ 25A, 10V 34mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±15V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1704 pF @ 25 V 8600 pF @ 25 V 3573 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 99W (Tc) 230W (Tc) 149W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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