BUK965R8-100E,118
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Nexperia USA Inc. BUK965R8-100E,118

Manufacturer No:
BUK965R8-100E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK965R8-100E,118 is a logic level N-channel MOSFET produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a SOT404 (DPAK) package. It is designed for high-performance applications and is automotive qualified, ensuring reliability and durability in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)65 A
ID (Pulsed Drain Current)260 A
RDS(on) (On-State Drain-Source Resistance)1.8 mΩ
Ptot (Total Power Dissipation)200 W
Tj (Junction Temperature)-55 to 175 °C
PackageSOT404 (DPAK)

Key Features

  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • TrenchMOS technology for low on-state resistance and high efficiency.
  • Automotive qualified, ensuring high reliability and durability.
  • Low thermal resistance and high current capability.
  • Accumulated pulse duration up to 50 hours for enhanced reliability.

Applications

  • Automotive systems, including power management and motor control.
  • Industrial power supplies and DC-DC converters.
  • Motor drives and control systems.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK965R8-100E,118? The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of this MOSFET? The continuous drain current is 65 A.
  3. What is the on-state drain-source resistance of this device? The on-state drain-source resistance is 1.8 mΩ.
  4. Is the BUK965R8-100E,118 automotive qualified? Yes, it is automotive qualified.
  5. What is the package type of the BUK965R8-100E,118? The package type is SOT404 (DPAK).
  6. What is the junction temperature range of this MOSFET? The junction temperature range is -55 to 175 °C.
  7. What technology is used in the BUK965R8-100E,118? It uses TrenchMOS technology.
  8. What is the total power dissipation of this device? The total power dissipation is 200 W.
  9. Can the BUK965R8-100E,118 be used in high-power switching applications? Yes, it is suitable for high-power switching applications.
  10. What is the gate-source voltage range of the BUK965R8-100E,118? The gate-source voltage range is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:17460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$3.81
190

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