Overview
The BUK965R8-100E,118 is a logic level N-channel MOSFET produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a SOT404 (DPAK) package. It is designed for high-performance applications and is automotive qualified, ensuring reliability and durability in demanding environments.
Key Specifications
Parameter | Value |
---|---|
VDS (Drain-Source Voltage) | 100 V |
VGS (Gate-Source Voltage) | ±20 V |
ID (Continuous Drain Current) | 65 A |
ID (Pulsed Drain Current) | 260 A |
RDS(on) (On-State Drain-Source Resistance) | 1.8 mΩ |
Ptot (Total Power Dissipation) | 200 W |
Tj (Junction Temperature) | -55 to 175 °C |
Package | SOT404 (DPAK) |
Key Features
- Logic level gate drive for easy interface with microcontrollers and other logic circuits.
- TrenchMOS technology for low on-state resistance and high efficiency.
- Automotive qualified, ensuring high reliability and durability.
- Low thermal resistance and high current capability.
- Accumulated pulse duration up to 50 hours for enhanced reliability.
Applications
- Automotive systems, including power management and motor control.
- Industrial power supplies and DC-DC converters.
- Motor drives and control systems.
- High-power switching applications.
Q & A
- What is the maximum drain-source voltage of the BUK965R8-100E,118? The maximum drain-source voltage is 100 V.
- What is the continuous drain current rating of this MOSFET? The continuous drain current is 65 A.
- What is the on-state drain-source resistance of this device? The on-state drain-source resistance is 1.8 mΩ.
- Is the BUK965R8-100E,118 automotive qualified? Yes, it is automotive qualified.
- What is the package type of the BUK965R8-100E,118? The package type is SOT404 (DPAK).
- What is the junction temperature range of this MOSFET? The junction temperature range is -55 to 175 °C.
- What technology is used in the BUK965R8-100E,118? It uses TrenchMOS technology.
- What is the total power dissipation of this device? The total power dissipation is 200 W.
- Can the BUK965R8-100E,118 be used in high-power switching applications? Yes, it is suitable for high-power switching applications.
- What is the gate-source voltage range of the BUK965R8-100E,118? The gate-source voltage range is ±20 V.