BUK9640-100A,118
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Nexperia USA Inc. BUK9640-100A,118

Manufacturer No:
BUK9640-100A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 39A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9640-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of power MOSFETs and is designed for high-performance applications. The BUK9640-100A is automotive qualified, making it suitable for use in automotive systems. It utilizes TrenchMOS technology, which enhances its efficiency and reliability. The FET is packaged in a D2PAK (SOT404) plastic single-ended surface-mounted package, ensuring robust thermal performance and ease of integration into various electronic designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (drain-source voltage) Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
VGS (gate-source voltage) - -15 - 15 V
ID (drain current) Tmb = 25 °C; VGS = 5 V - - 39 A
IDM (peak drain current) Tmb = 25 °C; pulsed; tp ≤ 10 µs - - 159 A
RDSon (drain-source on-state resistance) VGS = 5 V; ID = 25 A; Tj = 25 °C - 34 40
Tj (junction temperature) - -55 - 175 °C
Ptot (total power dissipation) Tmb = 25 °C - - 158 W
QGD (gate-drain charge) VGS = 5 V; ID = 25 A; VDS = 80 V; Tj = 25 °C - 20 - nC

Key Features

  • Automotive Qualified: Suitable for use in automotive applications, ensuring reliability and performance in demanding environments.
  • TrenchMOS Technology: Enhances efficiency and reduces on-state resistance, making it ideal for high-power applications.
  • Logic Level Operation: Can be driven directly from standard logic levels, simplifying circuit design.
  • High Current Capability: Supports a maximum drain current of 39 A and peak drain current of 159 A.
  • Low On-State Resistance: RDSon as low as 34 mΩ at VGS = 5 V, reducing power losses.
  • High Junction Temperature: Operates up to a junction temperature of 175 °C, ensuring stability in high-temperature environments.
  • Robust Avalanche Ruggedness: Non-repetitive drain-source avalanche energy (EDS(AL)S) ensures the device can withstand transient conditions.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power steering, braking systems, and engine management.
  • Industrial Power Systems: Used in industrial power supplies, motor control, and power conversion systems.
  • Consumer Electronics: Found in high-power consumer electronics like power adapters, battery chargers, and audio amplifiers.
  • Power Management: Ideal for power management in computing, mobile devices, and wearables.

Q & A

  1. What is the maximum drain-source voltage of the BUK9640-100A?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the BUK9640-100A at VGS = 5 V?

    The typical on-state resistance (RDSon) at VGS = 5 V is 34 mΩ.

  3. What is the maximum junction temperature for the BUK9640-100A?

    The maximum junction temperature (Tj) is 175 °C.

  4. Is the BUK9640-100A automotive qualified?

    Yes, the BUK9640-100A is automotive qualified.

  5. What is the package type of the BUK9640-100A?

    The package type is D2PAK (SOT404).

  6. What is the maximum drain current of the BUK9640-100A?

    The maximum drain current (ID) is 39 A.

  7. What is the peak drain current of the BUK9640-100A?

    The peak drain current (IDM) is 159 A.

  8. What is the total power dissipation of the BUK9640-100A?

    The total power dissipation (Ptot) is 158 W.

  9. What is the gate-drain charge of the BUK9640-100A?

    The typical gate-drain charge (QGD) is 20 nC.

  10. What are some common applications of the BUK9640-100A?

    Common applications include automotive systems, industrial power systems, consumer electronics, and power management in computing and mobile devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3072 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK9640-100A,118 BUK9660-100A,118 BUK9620-100A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 26A (Tc) 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 25A, 10V 58mOhm @ 15A, 10V 19mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 5 V - -
Vgs (Max) ±15V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 3072 pF @ 25 V 1924 pF @ 25 V 6385 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 158W (Tc) 106W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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