BUK9640-100A,118
  • Share:

Nexperia USA Inc. BUK9640-100A,118

Manufacturer No:
BUK9640-100A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 39A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9640-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of power MOSFETs and is designed for high-performance applications. The BUK9640-100A is automotive qualified, making it suitable for use in automotive systems. It utilizes TrenchMOS technology, which enhances its efficiency and reliability. The FET is packaged in a D2PAK (SOT404) plastic single-ended surface-mounted package, ensuring robust thermal performance and ease of integration into various electronic designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (drain-source voltage) Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
VGS (gate-source voltage) - -15 - 15 V
ID (drain current) Tmb = 25 °C; VGS = 5 V - - 39 A
IDM (peak drain current) Tmb = 25 °C; pulsed; tp ≤ 10 µs - - 159 A
RDSon (drain-source on-state resistance) VGS = 5 V; ID = 25 A; Tj = 25 °C - 34 40
Tj (junction temperature) - -55 - 175 °C
Ptot (total power dissipation) Tmb = 25 °C - - 158 W
QGD (gate-drain charge) VGS = 5 V; ID = 25 A; VDS = 80 V; Tj = 25 °C - 20 - nC

Key Features

  • Automotive Qualified: Suitable for use in automotive applications, ensuring reliability and performance in demanding environments.
  • TrenchMOS Technology: Enhances efficiency and reduces on-state resistance, making it ideal for high-power applications.
  • Logic Level Operation: Can be driven directly from standard logic levels, simplifying circuit design.
  • High Current Capability: Supports a maximum drain current of 39 A and peak drain current of 159 A.
  • Low On-State Resistance: RDSon as low as 34 mΩ at VGS = 5 V, reducing power losses.
  • High Junction Temperature: Operates up to a junction temperature of 175 °C, ensuring stability in high-temperature environments.
  • Robust Avalanche Ruggedness: Non-repetitive drain-source avalanche energy (EDS(AL)S) ensures the device can withstand transient conditions.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power steering, braking systems, and engine management.
  • Industrial Power Systems: Used in industrial power supplies, motor control, and power conversion systems.
  • Consumer Electronics: Found in high-power consumer electronics like power adapters, battery chargers, and audio amplifiers.
  • Power Management: Ideal for power management in computing, mobile devices, and wearables.

Q & A

  1. What is the maximum drain-source voltage of the BUK9640-100A?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the BUK9640-100A at VGS = 5 V?

    The typical on-state resistance (RDSon) at VGS = 5 V is 34 mΩ.

  3. What is the maximum junction temperature for the BUK9640-100A?

    The maximum junction temperature (Tj) is 175 °C.

  4. Is the BUK9640-100A automotive qualified?

    Yes, the BUK9640-100A is automotive qualified.

  5. What is the package type of the BUK9640-100A?

    The package type is D2PAK (SOT404).

  6. What is the maximum drain current of the BUK9640-100A?

    The maximum drain current (ID) is 39 A.

  7. What is the peak drain current of the BUK9640-100A?

    The peak drain current (IDM) is 159 A.

  8. What is the total power dissipation of the BUK9640-100A?

    The total power dissipation (Ptot) is 158 W.

  9. What is the gate-drain charge of the BUK9640-100A?

    The typical gate-drain charge (QGD) is 20 nC.

  10. What are some common applications of the BUK9640-100A?

    Common applications include automotive systems, industrial power systems, consumer electronics, and power management in computing and mobile devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3072 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.77
326

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK9640-100A,118 BUK9660-100A,118 BUK9620-100A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 26A (Tc) 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 25A, 10V 58mOhm @ 15A, 10V 19mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 5 V - -
Vgs (Max) ±15V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 3072 pF @ 25 V 1924 pF @ 25 V 6385 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 158W (Tc) 106W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
PDZ20BF
PDZ20BF
Nexperia USA Inc.
DIODE ZENER 20.39V 400MW SOD323
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP