BUK7Y22-100EX
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Nexperia USA Inc. BUK7Y22-100EX

Manufacturer No:
BUK7Y22-100EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 49A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK7Y22-100EX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed for use in demanding automotive and industrial applications, where reliability and thermal performance are critical. The MOSFET features a standard level threshold voltage and is packaged in the LFPAK56 (Power-SO8) package, which is known for its excellent thermal performance and compact size.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
On-State Resistance (Rds(on))22 mΩ
Continuous Drain Current (Id)49 A (at Tc)
Power Dissipation (Pd)147 W (at Tc)
Threshold Voltage (Vth)4 V @ 1 mA
Operating Temperature Range-55°C to +175°C
Package TypeLFPAK56 (Power-SO8)

Key Features

  • High current handling capability of up to 49 A.
  • Low on-state resistance of 22 mΩ, reducing power losses.
  • High voltage rating of 100 V, suitable for various power applications.
  • Compact LFPAK56 package with excellent thermal performance.
  • AQG-324 qualified, ensuring reliability in automotive and industrial environments.
  • Operating temperature range of -55°C to +175°C, suitable for thermally demanding environments.

Applications

The BUK7Y22-100EX MOSFET is designed for use in a variety of applications, including:

  • Automotive systems: Such as power steering, power windows, and other high-current applications.
  • Industrial power systems: Including motor control, power supplies, and high-power switching applications.
  • Power management: In systems requiring high efficiency and reliability.

Q & A

  1. What is the voltage rating of the BUK7Y22-100EX MOSFET?
    The voltage rating (Vds) of the BUK7Y22-100EX is 100 V.
  2. What is the on-state resistance (Rds(on)) of this MOSFET?
    The on-state resistance (Rds(on)) is 22 mΩ.
  3. What is the maximum continuous drain current (Id) of this device?
    The maximum continuous drain current (Id) is 49 A at Tc.
  4. What is the power dissipation (Pd) of the BUK7Y22-100EX?
    The power dissipation (Pd) is 147 W at Tc.
  5. What is the threshold voltage (Vth) of this MOSFET?
    The threshold voltage (Vth) is 4 V @ 1 mA.
  6. What is the operating temperature range of the BUK7Y22-100EX?
    The operating temperature range is -55°C to +175°C.
  7. What package type is used for the BUK7Y22-100EX?
    The package type is LFPAK56 (Power-SO8).
  8. Is the BUK7Y22-100EX suitable for automotive applications?
    Yes, it is designed for use in automotive and industrial environments and is AQG-324 qualified.
  9. What are some common applications for the BUK7Y22-100EX?
    Common applications include automotive systems, industrial power systems, and power management in high-current applications.
  10. Where can I find detailed specifications for the BUK7Y22-100EX?
    Detailed specifications can be found in the datasheet available on websites such as Digi-Key, Mouser, and the official Nexperia website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK7Y22-100EX BUK7Y12-100EX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 15A, 10V 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2920 pF @ 25 V 5067 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 147W (Tc) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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