BUK765R2-40B,118
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Nexperia USA Inc. BUK765R2-40B,118

Manufacturer No:
BUK765R2-40B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 75A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK765R2-40B,118 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a D2PAK (SOT404) plastic package. It has been designed and qualified to the AEC-Q101 standard, making it suitable for automotive critical applications as well as other demanding environments.

Key Specifications

Parameter Value Unit
Type number BUK765R2-40B
Package version SOT404
Package name D2PAK
Product status End of life
Channel type N
Nr of transistors 1
V DS [max] 40 V
R DSon [max] @ V GS = 10 V 5.2
T j [max] 175 °C
I D [max] 143 A
Q GD [typ] 16 nC
Q G(tot) [typ] @ V GS = 10 V 52 nC
P tot [max] 203 W
Q r [typ] 38 nC
V GSth [typ] 3 V
Automotive qualified Yes
C iss [typ] 2842 pF
C oss [typ] 711 pF

Key Features

  • AEC-Q101 compliant, ensuring suitability for automotive critical applications.
  • Suitable for standard level gate drive sources.
  • Designed for thermally demanding environments with a maximum junction temperature of 175 °C.

Applications

  • 12 V loads.
  • Automotive systems.
  • General purpose power switching.
  • Motors, lamps, and solenoids.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK765R2-40B?

    The maximum drain-source voltage (V DS) is 40 V.

  2. What is the maximum continuous drain current (I D) of the BUK765R2-40B?

    The maximum continuous drain current (I D) is 143 A.

  3. What is the maximum junction temperature (T j) of the BUK765R2-40B?

    The maximum junction temperature (T j) is 175 °C.

  4. Is the BUK765R2-40B automotive qualified?

    Yes, the BUK765R2-40B is AEC-Q101 compliant and suitable for automotive critical applications.

  5. What is the typical gate-source threshold voltage (V GSth) of the BUK765R2-40B?

    The typical gate-source threshold voltage (V GSth) is 3 V.

  6. What is the package type of the BUK765R2-40B?

    The package type is D2PAK (SOT404).

  7. What are the typical input and output capacitances (C iss and C oss) of the BUK765R2-40B?

    The typical input capacitance (C iss) is 2842 pF, and the typical output capacitance (C oss) is 711 pF.

  8. What is the maximum power dissipation (P tot) of the BUK765R2-40B?

    The maximum power dissipation (P tot) is 203 W.

  9. What are some common applications of the BUK765R2-40B?

    Common applications include 12 V loads, automotive systems, general purpose power switching, and motors, lamps, and solenoids.

  10. Is the BUK765R2-40B suitable for high-temperature environments?

    Yes, it is designed for thermally demanding environments with a maximum junction temperature of 175 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3789 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):203W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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