BSS123,215
  • Share:

Nexperia USA Inc. BSS123,215

Manufacturer No:
BSS123,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 150MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123,215 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device is known for its fast switching capabilities and logic level compatibility, making it suitable for a variety of electronic applications.

Key Specifications

Parameter Value Unit
Channel Type N -
Number of Transistors 1 -
VDS (Max) 100 V
VGS (Max) 20 V
Tj (Max) 150 °C
ID (Max) 0.15 A
Ptot (Max) 0.25 W
Ciss (Typ) 23 pF
Coss (Typ) 6 pF
Package SOT23 (TO-236AB) -

Key Features

  • Extremely fast switching due to Trench MOSFET technology
  • Logic level compatible, allowing for easy integration with digital circuits
  • Subminiature surface mounting in SOT23 package, ideal for space-constrained designs
  • High-speed line driver and relay driver capabilities
  • Lead-free and halogen-free according to Nexperia's halogen-free definition

Applications

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers
  • General-purpose switching applications
  • Automotive, industrial, power, computing, consumer, mobile, and wearable electronics

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123,215?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the maximum gate-source voltage (VGS) of the BSS123,215?

    The maximum gate-source voltage (VGS) is 20 V.

  3. What is the package type of the BSS123,215?

    The BSS123,215 is packaged in a SOT23 (TO-236AB) SMD plastic package.

  4. Is the BSS123,215 lead-free and halogen-free?

    Yes, the BSS123,215 is lead-free and halogen-free according to Nexperia's halogen-free definition.

  5. What are the typical applications of the BSS123,215?

    The BSS123,215 is used in high-speed line drivers, relay drivers, telephone ringers, and general-purpose switching applications.

  6. What is the maximum continuous drain current (ID) of the BSS123,215?

    The maximum continuous drain current (ID) is 0.15 A.

  7. What is the maximum junction temperature (Tj) of the BSS123,215?

    The maximum junction temperature (Tj) is 150°C.

  8. Is the BSS123,215 suitable for automotive applications?

    No, the BSS123,215 is not automotive qualified.

  9. What are the typical capacitances of the BSS123,215?

    The typical input capacitance (Ciss) is 23 pF, and the typical output capacitance (Coss) is 6 pF.

  10. How can I obtain samples of the BSS123,215?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.33
1,429

Please send RFQ , we will respond immediately.

Same Series
BSS123/LF1R
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
74HC595PW,118
74HC595PW,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP