BSP250,115
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Nexperia USA Inc. BSP250,115

Manufacturer No:
BSP250,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 3A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The BSP250,115 is a P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, which are widely used in various electronic designs across different industries, including automotive, industrial, power, computing, and consumer electronics. The BSP250,115 is housed in a SOT223 (SC-73) medium power and flat lead Surface Mounted Device (SMD) plastic package, making it suitable for high-frequency applications and general-purpose power switching.

Key Specifications

Type numberPackageChannel typeVDS [max] (V)Ptot [max] (W)Release date
BSP250SOT223 (SC-73)P-channel-3052011-01-24

Key Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency applications due to fast switching characteristics.
  • General purpose power switching.
  • Low-loss motor and actuator drivers.

Applications

The BSP250,115 is versatile and can be used in a variety of applications, including:

  • Automotive systems for power switching and motor control.
  • Industrial automation for general-purpose power switching and actuator control.
  • Power supplies and DC-DC converters where high-frequency switching is required.
  • Consumer electronics for efficient power management.

Q & A

  1. What is the BSP250,115? The BSP250,115 is a P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) produced by Nexperia USA Inc.
  2. What package type does the BSP250,115 use? The BSP250,115 is housed in a SOT223 (SC-73) medium power and flat lead Surface Mounted Device (SMD) plastic package.
  3. What is the maximum drain-source voltage (VDS) for the BSP250,115? The maximum drain-source voltage (VDS) is -30 V.
  4. What is the maximum total power dissipation (Ptot) for the BSP250,115? The maximum total power dissipation (Ptot) is 5 W.
  5. What are the key features of the BSP250,115? Key features include low conduction losses, suitability for high-frequency applications, general-purpose power switching, and low-loss motor and actuator drivers.
  6. In which industries is the BSP250,115 commonly used? The BSP250,115 is commonly used in automotive, industrial, power, computing, and consumer electronics industries.
  7. How can I obtain samples of the BSP250,115? Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  8. What is the release date of the BSP250,115? The BSP250,115 was released on January 24, 2011.
  9. Can I use the BSP250,115 for high-frequency applications? Yes, the BSP250,115 is suitable for high-frequency applications due to its fast switching characteristics.
  10. Where can I find more detailed specifications and datasheets for the BSP250,115? Detailed specifications and datasheets can be found on Nexperia's official website and through distributors like Digi-Key and Newark.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.65W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Same Series
BSP250,135
BSP250,135
MOSFET P-CH 30V 3A SOT223

Similar Products

Part Number BSP250,115 BSP250,135 BSP220,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc) 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V 250mOhm @ 1A, 10V 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 20 V 250 pF @ 20 V 90 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.65W (Ta) 1.65W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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