BSP220,115
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Nexperia USA Inc. BSP220,115

Manufacturer No:
BSP220,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 200V 225MA SOT223
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSP220,115 is a P-Channel MOSFET transistor manufactured by Nexperia USA Inc. This device is designed for surface mount applications and is housed in the SOT-223 package. It is known for its high performance and reliability, making it suitable for a variety of electronic systems. The BSP220,115 is RoHS compliant and free from SVHC (Substances of Very High Concern), ensuring environmental sustainability.

Key Specifications

Parameter Value
Transistor Polarity P Channel
Drain Source Voltage (Vds) 200 V
Continuous Drain Current (Id) 200 mA
On Resistance (Rds(on)) 10 ohm
Transistor Case Style SOT-223
Transistor Mounting Surface Mount
Power Dissipation (Pd) 1.5 W
Gate Source Threshold Voltage Max 2.8 V
No. of Pins 4 Pins
Operating Temperature Max 150°C
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited

Key Features

  • High Voltage Capability: The BSP220,115 can handle a drain-source voltage of up to 200 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance of 10 ohm, this MOSFET minimizes power losses and enhances efficiency.
  • Surface Mount Package: The SOT-223 package is compact and ideal for surface mount technology, saving PCB space and facilitating easier assembly.
  • Environmental Compliance: The device is RoHS compliant and free from SVHC, ensuring it meets environmental regulations.
  • High Operating Temperature: It can operate up to a maximum temperature of 150°C, making it reliable in various environmental conditions.

Applications

  • Industrial Equipment: Suitable for use in industrial power supplies, motor drives, and other high-power applications.
  • Automotive Electronics: Can be used in automotive systems, including those requiring high reliability and efficiency.
  • Communications Equipment: Applicable in datacom modules and other communication devices where high performance is required.
  • Test and Measurement: Used in various test and measurement equipment due to its high accuracy and reliability.

Q & A

  1. What is the drain-source voltage rating of the BSP220,115?

    The BSP220,115 has a drain-source voltage rating of 200 V.

  2. What is the continuous drain current of the BSP220,115?

    The continuous drain current of the BSP220,115 is 200 mA.

  3. What is the on-resistance of the BSP220,115?

    The on-resistance (Rds(on)) of the BSP220,115 is 10 ohm.

  4. What is the package type of the BSP220,115?

    The BSP220,115 is housed in the SOT-223 surface mount package.

  5. Is the BSP220,115 RoHS compliant?

    Yes, the BSP220,115 is RoHS compliant.

  6. What is the maximum operating temperature of the BSP220,115?

    The maximum operating temperature of the BSP220,115 is 150°C.

  7. What is the moisture sensitivity level (MSL) of the BSP220,115?

    The MSL of the BSP220,115 is MSL 1 - Unlimited.

  8. What are some common applications of the BSP220,115?

    The BSP220,115 is commonly used in industrial equipment, automotive electronics, communications equipment, and test and measurement devices.

  9. Is the BSP220,115 free from SVHC?

    Yes, the BSP220,115 is free from SVHC (Substances of Very High Concern).

  10. What is the power dissipation of the BSP220,115?

    The power dissipation (Pd) of the BSP220,115 is 1.5 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP220,115 BSP250,115 BSP225,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Not For New Designs
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 30 V 250 V
Current - Continuous Drain (Id) @ 25°C 225mA (Ta) 3A (Tc) 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V 250mOhm @ 1A, 10V 15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 25 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V 250 pF @ 20 V 90 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.5W (Ta) 1.65W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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