BSS123K-TP
  • Share:

Micro Commercial Co BSS123K-TP

Manufacturer No:
BSS123K-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123K-TP is an N-channel enhancement-mode MOSFET transistor manufactured by Micro Commercial Co. It is designed for use in low power, small signal applications and offers high switching speed and low on-resistance. This makes it suitable for power management and amplification in various electronic circuits. The MOSFET is housed in a compact SOT-23-3 package, ensuring ease of integration into small electronic devices. It is also RoHS compliant, meeting the latest environmental standards for electronic components.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C170 mA
Drain-Source On Resistance (Rds On)6 Ohms @ 250 mA, 10 V
Gate-Source Threshold Voltage (Vgs th)1.5 V to 2.5 V
Gate Charge (Qg)2 nC @ 10 V
Gate-Source Voltage (Vgs)±20 V
Power Dissipation (Pd)350 mW
Operating Temperature-55°C to +150°C
Package/CaseSOT-23-3
Mounting TypeSurface Mount

Key Features

  • High switching speed and low on-resistance, making it efficient for power management and small signal amplification.
  • Compact SOT-23-3 package for easy integration into small electronic devices.
  • RoHS compliant, ensuring environmental compatibility.
  • Maximum drain-source voltage of 100 V and continuous drain current of 170 mA.
  • Gate threshold voltage of 1.5 V to 2.5 V for compatibility with various control circuits.
  • Fast turn-on and turn-off times, with rise and fall times of 8 ns and 16 ns, respectively.

Applications

The BSS123K-TP is suitable for a variety of applications, including:

  • Power management circuits.
  • Battery chargers.
  • Audio amplifier circuits for small signal amplification.
  • High-performance electronic devices requiring efficient switching and low on-resistance.

Q & A

  • Q: What is the maximum drain-source voltage of the BSS123K-TP?
    A: The maximum drain-source voltage is 100 V.
  • Q: What is the continuous drain current of the BSS123K-TP?
    A: The continuous drain current is 170 mA at 25°C.
  • Q: Is the BSS123K-TP suitable for audio amplifier applications?
    A: Yes, it is suitable for amplifying small signals in audio amplifier circuits.
  • Q: What is the package type of the BSS123K-TP?
    A: The package type is SOT-23-3.
  • Q: What is the operating temperature range of the BSS123K-TP?
    A: The operating temperature range is -55°C to +150°C.
  • Q: Is the BSS123K-TP RoHS compliant?
    A: Yes, it is RoHS compliant.
  • Q: What is the gate-source threshold voltage of the BSS123K-TP?
    A: The gate-source threshold voltage is between 1.5 V and 2.5 V.
  • Q: What is the power dissipation of the BSS123K-TP?
    A: The maximum power dissipation is 350 mW.
  • Q: What are the typical rise and fall times of the BSS123K-TP?
    A: The typical rise time is 8 ns and the typical fall time is 16 ns.
  • Q: Can the BSS123K-TP be used in high-performance electronic devices?
    A: Yes, it is suitable for high-performance applications due to its high switching speed and low on-resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.28
2,937

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSS123K-TP BSS123-TP
Manufacturer Micro Commercial Co Micro Commercial Co
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Tj) 170mA Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 250mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V 2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW 350mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAT54TW-TP
BAT54TW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAS16X-TP
BAS16X-TP
Micro Commercial Co
DIODE GEN PURP 75V 200MA SOD523
SS16HE3-LTP
SS16HE3-LTP
Micro Commercial Co
SCHOTTKY BARRIER RECTIFIERS 60V
MR7510-BP
MR7510-BP
Micro Commercial Co
DIODE GP 1KV 6A LEADED BUTTON
BZV55C9V1-TP
BZV55C9V1-TP
Micro Commercial Co
DIODE ZENER 9.1V 500MW MINI MELF
TIP32C-BP
TIP32C-BP
Micro Commercial Co
TRANS PNP 100V 3A TO220AB
BC846BWHE3-TP
BC846BWHE3-TP
Micro Commercial Co
TRANS NPN 65V 0.1A SOT323
TIP41C-BP
TIP41C-BP
Micro Commercial Co
TRANS NPN 100V 6A TO220AB
BCX56-10-TP
BCX56-10-TP
Micro Commercial Co
TRANS NPN 80V 1A SOT89
TIP122L-BP
TIP122L-BP
Micro Commercial Co
TRANS NPN 100V 5A TO220AB
2N7002KDWA-TP
2N7002KDWA-TP
Micro Commercial Co
N-CHANNEL MOSFET EFFECT,SOT-363
2N7002K-TP
2N7002K-TP
Micro Commercial Co
MOSFET N-CH 60V 340MA SOT23