BSS123K-TP
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Micro Commercial Co BSS123K-TP

Manufacturer No:
BSS123K-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The BSS123K-TP is an N-channel enhancement-mode MOSFET transistor manufactured by Micro Commercial Co. It is designed for use in low power, small signal applications and offers high switching speed and low on-resistance. This makes it suitable for power management and amplification in various electronic circuits. The MOSFET is housed in a compact SOT-23-3 package, ensuring ease of integration into small electronic devices. It is also RoHS compliant, meeting the latest environmental standards for electronic components.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C170 mA
Drain-Source On Resistance (Rds On)6 Ohms @ 250 mA, 10 V
Gate-Source Threshold Voltage (Vgs th)1.5 V to 2.5 V
Gate Charge (Qg)2 nC @ 10 V
Gate-Source Voltage (Vgs)±20 V
Power Dissipation (Pd)350 mW
Operating Temperature-55°C to +150°C
Package/CaseSOT-23-3
Mounting TypeSurface Mount

Key Features

  • High switching speed and low on-resistance, making it efficient for power management and small signal amplification.
  • Compact SOT-23-3 package for easy integration into small electronic devices.
  • RoHS compliant, ensuring environmental compatibility.
  • Maximum drain-source voltage of 100 V and continuous drain current of 170 mA.
  • Gate threshold voltage of 1.5 V to 2.5 V for compatibility with various control circuits.
  • Fast turn-on and turn-off times, with rise and fall times of 8 ns and 16 ns, respectively.

Applications

The BSS123K-TP is suitable for a variety of applications, including:

  • Power management circuits.
  • Battery chargers.
  • Audio amplifier circuits for small signal amplification.
  • High-performance electronic devices requiring efficient switching and low on-resistance.

Q & A

  • Q: What is the maximum drain-source voltage of the BSS123K-TP?
    A: The maximum drain-source voltage is 100 V.
  • Q: What is the continuous drain current of the BSS123K-TP?
    A: The continuous drain current is 170 mA at 25°C.
  • Q: Is the BSS123K-TP suitable for audio amplifier applications?
    A: Yes, it is suitable for amplifying small signals in audio amplifier circuits.
  • Q: What is the package type of the BSS123K-TP?
    A: The package type is SOT-23-3.
  • Q: What is the operating temperature range of the BSS123K-TP?
    A: The operating temperature range is -55°C to +150°C.
  • Q: Is the BSS123K-TP RoHS compliant?
    A: Yes, it is RoHS compliant.
  • Q: What is the gate-source threshold voltage of the BSS123K-TP?
    A: The gate-source threshold voltage is between 1.5 V and 2.5 V.
  • Q: What is the power dissipation of the BSS123K-TP?
    A: The maximum power dissipation is 350 mW.
  • Q: What are the typical rise and fall times of the BSS123K-TP?
    A: The typical rise time is 8 ns and the typical fall time is 16 ns.
  • Q: Can the BSS123K-TP be used in high-performance electronic devices?
    A: Yes, it is suitable for high-performance applications due to its high switching speed and low on-resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123K-TP BSS123-TP
Manufacturer Micro Commercial Co Micro Commercial Co
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Tj) 170mA Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 250mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V 2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW 350mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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