BCP55-10-TP
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Micro Commercial Co BCP55-10-TP

Manufacturer No:
BCP55-10-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP55-10-TP is an NPN medium power transistor produced by Micro Commercial Co. It is part of the BCP55 series, which is known for its high performance and reliability in various electronic applications. This transistor is packaged in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Value Unit
Collector-Base Breakdown Voltage (BVCEO) 60 V
Collector Current (IC) 1000 mA
Peak Pulse Current (ICM) 2000 mA
Power Dissipation (Ptot) 2 W
Collector-Emitter Saturation Voltage (VCE(sat)) < 0.5 V @ IC = 500mA, IB = 50mA
Transition Frequency (fT) 100 MHz @ IC = 50mA, VCE = 10V
Junction Temperature (TJ) 150 °C
Current Gain (hFE) 63 - 160 - @ IC = 150mA, VCE = 2V

Key Features

  • High current capability with a continuous collector current of 1 A and peak pulse current of 2 A.
  • High power dissipation capability of up to 2 W.
  • Low saturation voltage (VCE(sat) < 0.5 V @ IC = 500mA, IB = 50mA).
  • Available in gain groups 10 and 16.
  • Complementary PNP types available (BCP51, BCP52, and BCP53).
  • Totally lead-free and fully RoHS compliant.
  • Halogen- and antimony-free, making it a “green” device.

Applications

  • Linear voltage regulators.
  • Power management.
  • Low-side switches.
  • MOSFET drivers.
  • Battery-driven devices.
  • Amplifiers.
  • Automotive applications requiring specific change control.

Q & A

  1. What is the collector-base breakdown voltage of the BCP55-10-TP?

    The collector-base breakdown voltage (BVCEO) is 60 V.

  2. What is the maximum continuous collector current of the BCP55-10-TP?

    The maximum continuous collector current (IC) is 1000 mA.

  3. What is the power dissipation capability of the BCP55-10-TP?

    The power dissipation capability is up to 2 W.

  4. What is the collector-emitter saturation voltage of the BCP55-10-TP?

    The collector-emitter saturation voltage (VCE(sat)) is less than 0.5 V at IC = 500mA, IB = 50mA.

  5. What is the transition frequency of the BCP55-10-TP?

    The transition frequency (fT) is 100 MHz at IC = 50mA, VCE = 10V.

  6. Is the BCP55-10-TP RoHS compliant?
  7. What are the typical applications of the BCP55-10-TP?

    The BCP55-10-TP is used in linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.

  8. What is the package type of the BCP55-10-TP?

    The BCP55-10-TP is packaged in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

  9. Is the BCP55-10-TP suitable for automotive applications?
  10. What are the complementary PNP types for the BCP55-10-TP?

    The complementary PNP types are BCP51, BCP52, and BCP53.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP55-10-TP BCP56-10-TP BCP52-10-TP BCP53-10-TP BCP54-10-TP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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