Overview
The BSS123-TP is an N-Channel MOSFET produced by Micro Commercial Components (MCC). This device is packaged in the SOT-23 format, making it suitable for a variety of applications where space is limited. The BSS123-TP is designed to offer high performance and reliability, leveraging MCC's advanced semiconductor technology.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | ±20 | V |
| Continuous Drain Current | ID | - | - | 170 | mA |
| Pulsed Drain Current | IDM | - | - | 680 | mA |
| Power Dissipation | PD | - | - | 350 | mW |
| Drain-Source Breakdown Voltage | V(BR)DSS | - | - | 100 | V |
| Gate-Threshold Voltage | VGS(th) | 1.0 | 2.0 | 2.8 | V |
| Gate-Body Leakage Current | IGSS | - | - | ±50 | nA |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | µA |
| Drain-Source On-Resistance | RDS(on) | - | - | 6 | Ω |
| Forward Transconductance | gFS | - | - | 450 | mS |
| Junction Temperature | TJ | -55 | - | 150 | °C |
Key Features
- N-Channel MOSFET: The BSS123-TP is an N-Channel enhancement mode MOSFET, suitable for a wide range of switching and power management applications.
- High Voltage Rating: With a drain-source voltage rating of 100V, this MOSFET can handle high voltage applications efficiently.
- Low On-Resistance: The device features a low on-resistance of 6Ω at VGS = 10V and ID = 0.17A, reducing power losses and improving efficiency.
- Compact SOT-23 Package: The SOT-23 package makes it ideal for applications where space is limited, such as in portable electronics and automotive systems.
- High Forward Transconductance: A forward transconductance of 450 mS ensures high current driving capability.
- Wide Junction Temperature Range: The device operates over a junction temperature range of -55°C to 150°C, making it suitable for harsh environmental conditions.
Applications
- Automotive Systems: Suitable for use in automotive electronics due to its high reliability and compliance with automotive standards.
- Industrial Control: Used in industrial control systems for power management and switching applications.
- Consumer Electronics: Ideal for use in consumer electronics such as power supplies, battery chargers, and other portable devices.
- E-mobility: Can be used in e-mobility applications due to its high efficiency and reliability.
- Power Management: Suitable for various power management applications requiring high voltage and low on-resistance.
Q & A
- What is the drain-source voltage rating of the BSS123-TP MOSFET?
The drain-source voltage rating of the BSS123-TP MOSFET is 100V.
- What is the continuous drain current rating of the BSS123-TP?
The continuous drain current rating is 170 mA.
- What is the on-resistance of the BSS123-TP at VGS = 10V and ID = 0.17A?
The on-resistance is 6Ω.
- What is the gate-threshold voltage range of the BSS123-TP?
The gate-threshold voltage range is from 1.0V to 2.8V.
- What is the junction temperature range of the BSS123-TP?
The junction temperature range is from -55°C to 150°C.
- What package type is the BSS123-TP available in?
The BSS123-TP is available in the SOT-23 package.
- What are some common applications for the BSS123-TP MOSFET?
Common applications include automotive systems, industrial control, consumer electronics, e-mobility, and power management.
- What is the forward transconductance of the BSS123-TP?
The forward transconductance is 450 mS.
- Is the BSS123-TP suitable for high voltage applications?
Yes, the BSS123-TP is suitable for high voltage applications with a drain-source voltage rating of 100V.
- Does the BSS123-TP meet automotive standards?
Yes, the BSS123-TP is designed to meet or exceed automotive standards, making it suitable for automotive applications.
