Overview
The IRFH5300TRPBF is a high-performance N-channel MOSFET produced by Infineon Technologies, designed for power management applications. This surface-mount device is housed in an 8-PQFN (5x6) package, making it suitable for compact and efficient designs. With a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of up to 40 A (at 25°C), it is optimized for high-power, high-efficiency systems. Its low on-resistance (Rds(on)) of 1.4 mΩ at 10 V ensures minimal power loss, making it ideal for applications requiring robust performance and thermal management.
Key Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| FET Type | N-Channel | - | MOSFET |
| Drain-Source Voltage (Vdss) | 30 | V | At 25°C |
| Continuous Drain Current (Id) | 40 | A | At Ta = 25°C |
| On-Resistance (Rds(on)) | 1.4 | mΩ | At 10 V, 50 A |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.35 | V | At 150 µA |
| Gate Charge (Qg) | 120 | nC | At 10 V |
| Input Capacitance (Ciss) | 7200 | pF | At 15 V |
| Power Dissipation (Pd) | 3.6 | W | At Ta = 25°C |
| Operating Temperature | -55 to 150 | °C | TJ |
| Package | 8-PQFN (5x6) | - | Surface Mount |
Key Features
- Low on-resistance (Rds(on)) for reduced power loss.
- High continuous drain current (Id) for robust performance.
- Optimized for 5 V gate drive voltage, ensuring compatibility with logic-level circuits.
- Compact 8-PQFN (5x6) package for space-constrained designs.
- Wide operating temperature range (-55°C to 150°C) for versatile applications.
Applications
The IRFH5300TRPBF is widely used in power management systems, including DC-DC converters, motor control, and battery management. Its high efficiency and thermal performance make it suitable for industrial automation, automotive electronics, and consumer electronics. Additionally, its compact design and low power dissipation are ideal for portable devices and embedded systems.
Q & A
What is the maximum drain-source voltage of the IRFH5300TRPBF?
The maximum drain-source voltage (Vdss) is 30 V.
What is the typical on-resistance (Rds(on)) of this MOSFET?
The typical on-resistance is 1.4 mΩ at 10 V and 50 A.
What is the continuous drain current (Id) at 25°C?
The continuous drain current is 40 A at 25°C.
What is the gate-source threshold voltage (Vgs(th))?
The gate-source threshold voltage is 2.35 V at 150 µA.
What is the gate charge (Qg) of the IRFH5300TRPBF?
The gate charge is 120 nC at 10 V.
What is the input capacitance (Ciss) of this MOSFET?
The input capacitance is 7200 pF at 15 V.
What is the operating temperature range?
The operating temperature ranges from -55°C to 150°C.
What package does the IRFH5300TRPBF use?
It uses an 8-PQFN (5x6) surface-mount package.
Is this MOSFET suitable for automotive applications?
Yes, its robust performance and wide temperature range make it suitable for automotive electronics.
What are the key advantages of this MOSFET?
Its low on-resistance, high current handling, and compact design make it ideal for high-efficiency power management systems.
