IRFH5300TRPBF
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Infineon Technologies IRFH5300TRPBF

Manufacturer No:
IRFH5300TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 40A/100A 8PQFN
Delivery:
Payment:
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Product Introduction

Overview

The IRFH5300TRPBF is a high-performance N-channel MOSFET produced by Infineon Technologies, designed for power management applications. This surface-mount device is housed in an 8-PQFN (5x6) package, making it suitable for compact and efficient designs. With a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of up to 40 A (at 25°C), it is optimized for high-power, high-efficiency systems. Its low on-resistance (Rds(on)) of 1.4 mΩ at 10 V ensures minimal power loss, making it ideal for applications requiring robust performance and thermal management.

Key Specifications

ParameterValueUnitNotes
FET TypeN-Channel-MOSFET
Drain-Source Voltage (Vdss)30VAt 25°C
Continuous Drain Current (Id)40AAt Ta = 25°C
On-Resistance (Rds(on))1.4At 10 V, 50 A
Gate-Source Threshold Voltage (Vgs(th))2.35VAt 150 µA
Gate Charge (Qg)120nCAt 10 V
Input Capacitance (Ciss)7200pFAt 15 V
Power Dissipation (Pd)3.6WAt Ta = 25°C
Operating Temperature-55 to 150°CTJ
Package8-PQFN (5x6)-Surface Mount

Key Features

  • Low on-resistance (Rds(on)) for reduced power loss.
  • High continuous drain current (Id) for robust performance.
  • Optimized for 5 V gate drive voltage, ensuring compatibility with logic-level circuits.
  • Compact 8-PQFN (5x6) package for space-constrained designs.
  • Wide operating temperature range (-55°C to 150°C) for versatile applications.

Applications

The IRFH5300TRPBF is widely used in power management systems, including DC-DC converters, motor control, and battery management. Its high efficiency and thermal performance make it suitable for industrial automation, automotive electronics, and consumer electronics. Additionally, its compact design and low power dissipation are ideal for portable devices and embedded systems.

Q & A

What is the maximum drain-source voltage of the IRFH5300TRPBF?

The maximum drain-source voltage (Vdss) is 30 V.

What is the typical on-resistance (Rds(on)) of this MOSFET?

The typical on-resistance is 1.4 mΩ at 10 V and 50 A.

What is the continuous drain current (Id) at 25°C?

The continuous drain current is 40 A at 25°C.

What is the gate-source threshold voltage (Vgs(th))?

The gate-source threshold voltage is 2.35 V at 150 µA.

What is the gate charge (Qg) of the IRFH5300TRPBF?

The gate charge is 120 nC at 10 V.

What is the input capacitance (Ciss) of this MOSFET?

The input capacitance is 7200 pF at 15 V.

What is the operating temperature range?

The operating temperature ranges from -55°C to 150°C.

What package does the IRFH5300TRPBF use?

It uses an 8-PQFN (5x6) surface-mount package.

Is this MOSFET suitable for automotive applications?

Yes, its robust performance and wide temperature range make it suitable for automotive electronics.

What are the key advantages of this MOSFET?

Its low on-resistance, high current handling, and compact design make it ideal for high-efficiency power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number IRFH5300TRPBF IRFH5304TRPBF IRFH5301TRPBF IRFH5302TRPBF IRFH5306TRPBF IRFH5303TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc) 22A (Ta), 79A (Tc) 35A (Ta), 100A (Tc) 32A (Ta), 100A (Tc) 15A (Ta), 44A (Tc) 23A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V 4.5mOhm @ 47A, 10V 1.85mOhm @ 50A, 10V 2.1mOhm @ 50A, 10V 8.1mOhm @ 15A, 10V 4.2mOhm @ 49A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.35V @ 50µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 25µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 41 nC @ 10 V 77 nC @ 10 V 76 nC @ 10 V 12 nC @ 4.5 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 15 V 2360 pF @ 10 V 5114 pF @ 15 V 4400 pF @ 15 V 1125 pF @ 15 V 2190 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 3.6W (Ta), 250W (Tc) 3.6W (Ta), 46W (Tc) 3.6W (Ta), 110W (Tc) 3.6W (Ta), 100W (Tc) 3.6W (Ta), 26W (Tc) 3.6W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die PQFN (5x6) Single Die PQFN (5x6) Single Die 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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