IRF9540NSTRLPBF
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Infineon Technologies IRF9540NSTRLPBF

Manufacturer No:
IRF9540NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 23A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF9540NSTRLPBF is a single P-Channel IR MOSFET produced by Infineon Technologies. This device is packaged in the industry-standard D2PAK package, making it suitable for a wide range of applications. It is designed with a planar cell structure, which provides a wide Safe Operating Area (SOA) and is optimized for applications switching below 100 kHz. The MOSFET is qualified according to JEDEC standards and features a high-current carrying capability, with a continuous drain current of up to 23 A at 25°C and 14 A at 100°C.

Key Specifications

Parameter Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage (VBRDSS) - - -100 V
Static Drain-to-Source On-Resistance (RDS(on)) - - 117
Gate Threshold Voltage (VGS(th)) -2.0 - -4.0 V
Continuous Drain Current (ID) at TC = 25°C - - -23 A
Continuous Drain Current (ID) at TC = 100°C - - -14 A
Junction Operating Temperature -55 - 150 °C

Key Features

  • Planar Cell Structure: Provides a wide Safe Operating Area (SOA).
  • Low On-Resistance: Features ultra-low on-resistance, enhancing efficiency in switching applications.
  • High Junction Operating Temperature: Can operate up to 150°C, making it suitable for high-temperature environments.
  • Fast Switching Speed: Optimized for fast switching, reducing losses and improving overall system performance.
  • Repetitive Avalanche Rating: Allowed up to Tjmax, ensuring reliability in demanding applications.
  • Industry Standard Package: D2PAK package, which is wave-solderable and widely available.

Applications

The IRF9540NSTRLPBF is versatile and can be used in a variety of applications, including:

  • Power Supplies: Suitable for use in DC-DC converters, power adapters, and other power supply systems due to its high efficiency and reliability.
  • Motor Control: Used in motor drive circuits for its fast switching and high current handling capabilities.
  • Industrial Automation: Ideal for industrial automation systems that require robust and reliable power management.
  • Automotive Systems: Can be used in automotive applications where high temperature and reliability are critical).

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF9540NSTRLPBF?

    The maximum drain-to-source breakdown voltage is 100 V).

  2. What is the typical on-resistance of the IRF9540NSTRLPBF?

    The typical on-resistance is 117 mΩ).

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current at 25°C is 23 A).

  4. What is the junction operating temperature range of the IRF9540NSTRLPBF?

    The junction operating temperature range is from -55°C to 150°C).

  5. Is the IRF9540NSTRLPBF lead-free?
  6. What package type is the IRF9540NSTRLPBF available in?

    The IRF9540NSTRLPBF is available in the D2PAK package).

  7. Can the IRF9540NSTRLPBF be wave-soldered?
  8. What are some typical applications of the IRF9540NSTRLPBF?
  9. What is the gate threshold voltage range of the IRF9540NSTRLPBF?
  10. Does the IRF9540NSTRLPBF have a repetitive avalanche rating? jmax).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:117mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF9540NSTRLPBF IRF9540STRLPBF IRF9540NSTRRPBF IRF9530NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Last Time Buy Active
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 19A (Tc) 23A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 117mOhm @ 14A, 10V 200mOhm @ 11A, 10V 117mOhm @ 14A, 10V 200mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 61 nC @ 10 V 110 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V 1400 pF @ 25 V 1450 pF @ 25 V 760 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.1W (Ta), 110W (Tc) 3.7W (Ta), 150W (Tc) 3.1W (Ta), 110W (Tc) 3.8W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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