Overview
The IRF7313TRPBF is a dual N-channel HEXFET Power MOSFET produced by Infineon Technologies. This fifth-generation MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design. The device is packaged in an SO-8 (SOIC-8) package, which has been modified with a customized leadframe to enhance thermal characteristics and support multiple-die capability. This makes it ideal for a variety of power applications where space efficiency and reliability are crucial.
Key Specifications
| Parameter | Value |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (Vdss) | 30V |
| Drain-Source On Resistance (Rds(on)) | 0.046Ω (max) |
| Rated Power Dissipation | 2W |
| Gate Charge (Qg) | 33nC (max) |
| Gate-Source Voltage (Vgss) | 20V (max) |
| Drain Current (Id) | 6.5A |
| Turn-on Delay Time | 8.1ns |
| Turn-off Delay Time | 26ns |
| Rise Time | 8.9ns |
| Fall Time | 17ns |
| Operating Temperature Range | -55°C to +150°C |
| Gate Source Threshold (Vgs(th)) | 1V |
| Input Capacitance (Ciss) | 650pF (max) |
| Package Style | SOIC-8 |
| Mounting Method | Surface Mount |
| Lead Free Status / RoHS Status | Lead Free / RoHS Compliant |
Key Features
- Extremely low on-resistance per silicon area, enhancing efficiency.
- Fast switching speeds and ruggedized device design for reliable operation.
- Customized leadframe in SO-8 package for improved thermal characteristics and multiple-die capability.
- Ideal for applications requiring space efficiency and high reliability.
- Compatible with vapor phase, infrared, or wave soldering techniques.
- Lead-free and RoHS compliant, ensuring environmental compliance.
Applications
The IRF7313TRPBF is suitable for a wide variety of power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Audio amplifiers and other high-power audio equipment.
- Switch-mode power supplies and inverters.
- General-purpose power switching applications where high efficiency and reliability are required.
Q & A
- What is the drain-to-source voltage rating of the IRF7313TRPBF?
The drain-to-source voltage (Vdss) rating is 30V.
- What is the maximum drain current (Id) of the IRF7313TRPBF?
The maximum drain current (Id) is 6.5A.
- What is the on-resistance (Rds(on)) of the IRF7313TRPBF?
The maximum on-resistance (Rds(on)) is 0.046Ω.
- What is the gate charge (Qg) of the IRF7313TRPBF?
The gate charge (Qg) is 33nC (max).
- What is the operating temperature range of the IRF7313TRPBF?
The operating temperature range is -55°C to +150°C.
- Is the IRF7313TRPBF lead-free and RoHS compliant?
Yes, the IRF7313TRPBF is lead-free and RoHS compliant.
- What package style and mounting method does the IRF7313TRPBF use?
The IRF7313TRPBF is packaged in an SOIC-8 package and uses surface mount technology.
- What are the typical applications for the IRF7313TRPBF?
Typical applications include power supplies, motor control, audio amplifiers, switch-mode power supplies, and general-purpose power switching.
- How many devices are in a reel for the IRF7313TRPBF?
A reel contains 4000 devices.
- What soldering techniques are compatible with the IRF7313TRPBF package?
The package is compatible with vapor phase, infrared, or wave soldering techniques.
