Overview
The IRF5210STRR is a 100V single P-Channel Power MOSFET produced by Infineon Technologies. This device is part of the HEXFET family, which utilizes advanced silicon processes to offer a wide range of devices suitable for various power applications. The IRF5210STRR is available in a D2PAK (TO-263) package, which is a surface mount type, making it convenient for modern PCB designs.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | - | - | -100 | V | VGS = 0V, ID = -250µA |
| Continuous Drain Current (ID) @ 25°C | - | - | 38 | A | VGS = -10V |
| Pulsed Drain Current (IDM) | - | - | 140 | A | Pulse width limited by max. junction temperature |
| Maximum Power Dissipation (PD) @ TA = 25°C | - | - | 3.1 | W | - |
| Gate-to-Source Voltage (VGS) | - | - | ±20 | V | - |
| Static Drain-to-Source On-Resistance (RDS(on)) | - | - | 0.06 | Ω | VGS = 10V, ID = -12A |
| Operating Junction Temperature (TJ) | -55 | - | 150 | °C | - |
| Storage Temperature Range (TSTG) | -55 | - | 150 | °C | - |
Key Features
- Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
- Low On-Resistance: The device features a static drain-to-source on-resistance of up to 0.06 Ω, enhancing its efficiency in power applications.
- High Current Rating: Capable of handling continuous drain currents up to 38A at 25°C and pulsed drain currents up to 140A.
- Fast Switching and Repetitive Avalanche Rating: Designed for fast switching speeds and has a repetitive avalanche rating, making it reliable for various power applications.
- Industry Standard Package: Available in D2PAK (TO-263) surface mount packages, allowing for easy integration into modern designs.
- Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a broad range of environmental conditions).
Applications
The IRF5210STRR is versatile and can be used in a variety of power applications, including:
- DC Motors and Inverters: Suitable for motor control and inverter applications due to its high current handling and fast switching capabilities).
- Switch Mode Power Supplies (SMPS): Ideal for use in SMPS due to its low on-resistance and high efficiency).
- Lighting and Load Switches: Can be used in lighting systems and as load switches due to its high current rating and fast switching).
- Battery Powered Applications: Suitable for battery-powered devices requiring high current and efficient power management).
Q & A
- What is the maximum drain-to-source voltage of the IRF5210STRR?
The maximum drain-to-source voltage is 100V).
- What is the continuous drain current rating of the IRF5210STRR at 25°C?
The continuous drain current rating is 38A at 25°C).
- What is the typical on-resistance of the IRF5210STRR?
The typical static drain-to-source on-resistance is 0.06 Ω).
- What is the operating junction temperature range of the IRF5210STRR?
The operating junction temperature range is from -55°C to 150°C).
- What package types are available for the IRF5210STRR?
The device is available in D2PAK (TO-263) surface mount packages).
- Is the IRF5210STRR suitable for high-frequency applications?
The device is optimized for applications switching below 100kHz, making it more suitable for low-frequency applications).
- What are the benefits of using the IRF5210STRR in power applications?
The benefits include increased ruggedness, wide availability, industry standard qualification, high performance in low frequency applications, and high current capability).
- Can the IRF5210STRR be used in battery-powered applications?
Yes, it is suitable for battery-powered applications due to its high current handling and efficient power management).
- What is the maximum gate-to-source voltage for the IRF5210STRR?
The maximum gate-to-source voltage is ±20V).
- Does the IRF5210STRR have a repetitive avalanche rating?
Yes, the device has a repetitive avalanche rating, making it reliable for applications requiring this feature).
