IPP051N15N5AKSA1
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Infineon Technologies IPP051N15N5AKSA1

Manufacturer No:
IPP051N15N5AKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 150V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPP051N15N5AKSA1 is a high-performance N-channel power MOSFET produced by Infineon Technologies. This device is part of the OptiMOS family, known for its excellent gate charge and very low on-resistance, making it ideal for high-power applications. The MOSFET features a voltage rating of 150V and a continuous drain current of 115A, with a maximum drain current of 480A. It is designed to handle high power dissipation, up to 300W, making it suitable for demanding power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)150V
Continuous Drain Current (Id)115A
Maximum Drain Current (Idm)480A
Power Dissipation (Pd)300W
On-Resistance (Rds(on))Very low (specific value dependent on gate-source voltage and temperature)
Gate Charge (Qg)Excellent gate charge x on-resistance product (FOM)

Key Features

  • High voltage rating of 150V
  • High continuous drain current of 115A and maximum drain current of 480A
  • Very low on-resistance (Rds(on))
  • Excellent gate charge x on-resistance product (FOM)
  • High power dissipation capability of up to 300W
  • Part of the OptiMOS family, known for high performance and reliability

Applications

The IPP051N15N5AKSA1 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power management
  • Automotive systems requiring high reliability and performance
  • Renewable energy systems such as solar and wind power inverters

Q & A

  1. What is the voltage rating of the IPP051N15N5AKSA1?
    The voltage rating of the IPP051N15N5AKSA1 is 150V.
  2. What is the continuous drain current of the IPP051N15N5AKSA1?
    The continuous drain current is 115A.
  3. What is the maximum drain current of the IPP051N15N5AKSA1?
    The maximum drain current is 480A.
  4. What is the power dissipation capability of the IPP051N15N5AKSA1?
    The power dissipation capability is up to 300W.
  5. Why is the IPP051N15N5AKSA1 part of the OptiMOS family significant?
    It is significant because the OptiMOS family is known for its excellent gate charge and very low on-resistance, making it ideal for high-performance applications.
  6. What are some typical applications for the IPP051N15N5AKSA1?
    Typical applications include power supplies, motor control systems, industrial power management, automotive systems, and renewable energy systems.
  7. How does the IPP051N15N5AKSA1 handle high power dissipation?
    The device is designed to handle high power dissipation up to 300W, making it suitable for demanding power management and switching applications.
  8. What are the key features of the IPP051N15N5AKSA1?
    The key features include high voltage rating, high continuous and maximum drain currents, very low on-resistance, and excellent gate charge x on-resistance product.
  9. Where can I find detailed specifications for the IPP051N15N5AKSA1?
    Detailed specifications can be found in the datasheet available on websites such as DigiKey, Mouser, and Future Electronics.
  10. Is the IPP051N15N5AKSA1 suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high reliability and performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):500mW (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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