IPLU300N04S4R8XTMA1
  • Share:

Infineon Technologies IPLU300N04S4R8XTMA1

Manufacturer No:
IPLU300N04S4R8XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 300A 8HSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPLU300N04S4-R8XTMA1, produced by Infineon Technologies, is a high-performance automotive MOSFET designed for demanding applications. This N-channel MOSFET is part of Infineon's OptiMOS™-T2 family, known for its excellent electrical and thermal characteristics. The device is optimized for high current automotive applications, offering superior efficiency and reliability.

Key Specifications

ParameterValue
VBRDSS (Drain-Source Breakdown Voltage)40 V
RDSon (On-Resistance)0.77 mΩ (max)
ID (Continuous Drain Current)300 A
RthJC (Junction-to-Case Thermal Resistance)0.35 K/W
Package Footprint Area115 mm²
Lead-Free100% lead-free
Package TypeTOLL Package (JEDEC registered)

Key Features

  • High current capability: Suitable for high current automotive applications.
  • Low on-resistance: RDSon of 0.77 mΩ (max) for efficient power handling.
  • Automotive-grade reliability: Compliant with automotive standards and 100% lead-free.
  • AOI (Automatic Optical Inspection) capability: Ensures high-quality production.
  • TOLL Package: JEDEC registered package for standardized use.

Applications

  • High Current Automotive Applications: Ideal for systems requiring high power handling.
  • Electronic Power Steering (EPS): Enhances the efficiency and reliability of EPS systems.
  • Battery Management – Start Stop: Suitable for battery management in start-stop systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the IPLU300N04S4-R8XTMA1?
    The maximum drain-source breakdown voltage is 40 V.
  2. What is the on-resistance of the IPLU300N04S4-R8XTMA1?
    The on-resistance (RDSon) is 0.77 mΩ (max).
  3. What is the continuous drain current rating of the IPLU300N04S4-R8XTMA1?
    The continuous drain current (ID) is 300 A.
  4. What is the junction-to-case thermal resistance of the IPLU300N04S4-R8XTMA1?
    The junction-to-case thermal resistance (RthJC) is 0.35 K/W.
  5. Is the IPLU300N04S4-R8XTMA1 lead-free?
    Yes, the device is 100% lead-free.
  6. What type of package does the IPLU300N04S4-R8XTMA1 use?
    The device uses a TOLL Package, which is JEDEC registered.
  7. What are some potential applications for the IPLU300N04S4-R8XTMA1?
    Potential applications include high current automotive applications, electronic power steering (EPS), and battery management – start stop systems.
  8. Does the IPLU300N04S4-R8XTMA1 support AOI (Automatic Optical Inspection)?
    Yes, the device supports AOI.
  9. Why is the IPLU300N04S4-R8XTMA1 suitable for automotive applications?
    The device is suitable due to its high current capability, low on-resistance, and compliance with automotive standards.
  10. Where can I find more detailed specifications and documentation for the IPLU300N04S4-R8XTMA1?
    You can find detailed specifications and documentation on Infineon's official website and through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.77mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:287 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22945 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$5.29
154

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCP5416H6327XTSA1
BCP5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCX53E6327HTSA1
BCX53E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
IKW75N60TAFKSA1
IKW75N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
IRPS5401MTRPBF
IRPS5401MTRPBF
Infineon Technologies
POL - SUPIRBUCK
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP