IPB017N10N5LFATMA1
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Infineon Technologies IPB017N10N5LFATMA1

Manufacturer No:
IPB017N10N5LFATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPB017N10N5LFATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of their OptiMOS™ 5 Linear FET series. This device is designed for applications requiring high current handling and low on-resistance. It is particularly suited for hot-swap and e-fuse applications due to its robust specifications and reliability.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-Resistance) 1.7 mΩ
ID (Continuous Drain Current) 256 A
ID,pulse (Pulsed Drain Current) 1024 A
Ptot (Power Dissipation) 313 W
VGS (Gate-Source Voltage) -20 to 20 V
Tj (Operating Junction Temperature) -55 to 175 °C
Package TO-263-7 (D²-PAK)

Key Features

  • Ideal for hot-swap and e-fuse applications due to its low on-resistance and high current handling capabilities.
  • Very low on-resistance (RDS(on)) of 1.7 mΩ, enhancing efficiency in power management.
  • Wide safe operating area (SOA) ensuring reliable operation under various conditions.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Pb-free plating and RoHS compliant, making it environmentally friendly.
  • Halogen-free according to IEC61249-2-21, further enhancing its environmental compliance.

Applications

  • Hot-swap applications: The MOSFET's low on-resistance and high current handling make it suitable for hot-swap scenarios where power needs to be managed efficiently.
  • E-fuse applications: Its robust specifications and reliability make it an ideal choice for electronic fuse (e-fuse) applications.
  • Power management systems: Used in various power management systems where high efficiency and reliability are crucial.
  • Industrial power supplies: Suitable for high-power industrial applications requiring reliable and efficient power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the IPB017N10N5LFATMA1 MOSFET?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the on-resistance (RDS(on)) of this MOSFET?

    The on-resistance (RDS(on)) is 1.7 mΩ.

  3. What is the continuous drain current (ID) rating of this device?

    The continuous drain current (ID) rating is 256 A.

  4. Is the IPB017N10N5LFATMA1 MOSFET RoHS compliant?

    Yes, the IPB017N10N5LFATMA1 MOSFET is RoHS compliant and has Pb-free plating.

  5. What package type does the IPB017N10N5LFATMA1 come in?

    The IPB017N10N5LFATMA1 comes in a TO-263-7 (D²-PAK) package.

  6. What are the typical applications for this MOSFET?

    Typical applications include hot-swap, e-fuse, power management systems, and industrial power supplies.

  7. What is the operating junction temperature range for this device?

    The operating junction temperature range is -55 to 175 °C.

  8. Is the IPB017N10N5LFATMA1 halogen-free?

    Yes, the IPB017N10N5LFATMA1 is halogen-free according to IEC61249-2-21.

  9. What is the maximum power dissipation (Ptot) of this MOSFET?

    The maximum power dissipation (Ptot) is 313 W.

  10. Has the IPB017N10N5LFATMA1 been avalanche tested?

    Yes, the IPB017N10N5LFATMA1 has been 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):313W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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$10.25
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