Overview
The IPB017N10N5LFATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of their OptiMOS™ 5 Linear FET series. This device is designed for applications requiring high current handling and low on-resistance. It is particularly suited for hot-swap and e-fuse applications due to its robust specifications and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 100 | V |
| RDS(on) (On-Resistance) | 1.7 | mΩ |
| ID (Continuous Drain Current) | 256 | A |
| ID,pulse (Pulsed Drain Current) | 1024 | A |
| Ptot (Power Dissipation) | 313 | W |
| VGS (Gate-Source Voltage) | -20 to 20 | V |
| Tj (Operating Junction Temperature) | -55 to 175 | °C |
| Package | TO-263-7 (D²-PAK) |
Key Features
- Ideal for hot-swap and e-fuse applications due to its low on-resistance and high current handling capabilities.
- Very low on-resistance (RDS(on)) of 1.7 mΩ, enhancing efficiency in power management.
- Wide safe operating area (SOA) ensuring reliable operation under various conditions.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Pb-free plating and RoHS compliant, making it environmentally friendly.
- Halogen-free according to IEC61249-2-21, further enhancing its environmental compliance.
Applications
- Hot-swap applications: The MOSFET's low on-resistance and high current handling make it suitable for hot-swap scenarios where power needs to be managed efficiently.
- E-fuse applications: Its robust specifications and reliability make it an ideal choice for electronic fuse (e-fuse) applications.
- Power management systems: Used in various power management systems where high efficiency and reliability are crucial.
- Industrial power supplies: Suitable for high-power industrial applications requiring reliable and efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the IPB017N10N5LFATMA1 MOSFET?
The maximum drain-source voltage (VDS) is 100 V.
- What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 1.7 mΩ.
- What is the continuous drain current (ID) rating of this device?
The continuous drain current (ID) rating is 256 A.
- Is the IPB017N10N5LFATMA1 MOSFET RoHS compliant?
Yes, the IPB017N10N5LFATMA1 MOSFET is RoHS compliant and has Pb-free plating.
- What package type does the IPB017N10N5LFATMA1 come in?
The IPB017N10N5LFATMA1 comes in a TO-263-7 (D²-PAK) package.
- What are the typical applications for this MOSFET?
Typical applications include hot-swap, e-fuse, power management systems, and industrial power supplies.
- What is the operating junction temperature range for this device?
The operating junction temperature range is -55 to 175 °C.
- Is the IPB017N10N5LFATMA1 halogen-free?
Yes, the IPB017N10N5LFATMA1 is halogen-free according to IEC61249-2-21.
- What is the maximum power dissipation (Ptot) of this MOSFET?
The maximum power dissipation (Ptot) is 313 W.
- Has the IPB017N10N5LFATMA1 been avalanche tested?
Yes, the IPB017N10N5LFATMA1 has been 100% avalanche tested.
