IAUC24N10S5L300ATMA1
  • Share:

Infineon Technologies IAUC24N10S5L300ATMA1

Manufacturer No:
IAUC24N10S5L300ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 24A TDSON-8-33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IAUC24N10S5L300ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, designed specifically for automotive applications. This device is part of the OptiMOS™ 5 family, known for its excellent electrical and thermal performance. It is AEC Q101 qualified, ensuring reliability and robustness in harsh automotive environments. The MOSFET features a logic-level gate drive, making it compatible with a wide range of control signals.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Drain Current (Id)24 A
Pulsed Drain Current (Id_pulsed)96 A
On-Resistance (Rds(on))30 mΩ max
Power Dissipation (Pd)38 W
Gate-Source Voltage (Vgs)±20 V
PackagePG-TDSON-8
MSL RatingMSL1 up to 260°C peak reflow

Key Features

  • Enhancement mode N-channel MOSFET with logic-level gate drive
  • Low on-resistance (Rds(on)) of 30 mΩ max for efficient power handling
  • High drain current of 24 A and pulsed drain current of 96 A
  • AEC Q101 qualified for reliability in automotive applications
  • PG-TDSON-8 package for compact and efficient thermal management
  • MSL1 rating up to 260°C peak reflow for ease of assembly

Applications

The IAUC24N10S5L300ATMA1 is designed for various automotive applications, including but not limited to:

  • Power management in electric vehicles and hybrid electric vehicles
  • Battery management systems
  • Motor control and drive systems
  • Power supplies and DC-DC converters
  • Other high-power automotive electronics

Q & A

  1. What is the maximum drain-source voltage of the IAUC24N10S5L300ATMA1?
    The maximum drain-source voltage is 100 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance is 30 mΩ max.
  3. What is the maximum drain current of this device?
    The maximum drain current is 24 A.
  4. Is the IAUC24N10S5L300ATMA1 AEC Q101 qualified?
    Yes, it is AEC Q101 qualified.
  5. What is the package type of this MOSFET?
    The package type is PG-TDSON-8.
  6. What is the MSL rating of this component?
    The MSL rating is MSL1 up to 260°C peak reflow.
  7. What are some typical applications of the IAUC24N10S5L300ATMA1?
    Typical applications include power management in electric vehicles, battery management systems, motor control, and power supplies.
  8. What is the gate-source voltage range for this MOSFET?
    The gate-source voltage range is ±20 V.
  9. How much power can this MOSFET dissipate?
    The power dissipation is 38 W.
  10. Is this MOSFET suitable for high-temperature environments?
    Yes, it is designed to handle high temperatures and is MSL1 rated up to 260°C peak reflow.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-33
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.11
707

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS21E6359HTMA1
BAS21E6359HTMA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BCV62CE6327HTSA1
BCV62CE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23-3
BCX56H6327XTSA1
BCX56H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BCX5216E6433HTMA1
BCX5216E6433HTMA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
BCP 53-16 E6327
BCP 53-16 E6327
Infineon Technologies
TRANS PNP 80V 1A SOT143R-3D
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3