IAUC24N10S5L300ATMA1
  • Share:

Infineon Technologies IAUC24N10S5L300ATMA1

Manufacturer No:
IAUC24N10S5L300ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 24A TDSON-8-33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IAUC24N10S5L300ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, designed specifically for automotive applications. This device is part of the OptiMOS™ 5 family, known for its excellent electrical and thermal performance. It is AEC Q101 qualified, ensuring reliability and robustness in harsh automotive environments. The MOSFET features a logic-level gate drive, making it compatible with a wide range of control signals.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Drain Current (Id)24 A
Pulsed Drain Current (Id_pulsed)96 A
On-Resistance (Rds(on))30 mΩ max
Power Dissipation (Pd)38 W
Gate-Source Voltage (Vgs)±20 V
PackagePG-TDSON-8
MSL RatingMSL1 up to 260°C peak reflow

Key Features

  • Enhancement mode N-channel MOSFET with logic-level gate drive
  • Low on-resistance (Rds(on)) of 30 mΩ max for efficient power handling
  • High drain current of 24 A and pulsed drain current of 96 A
  • AEC Q101 qualified for reliability in automotive applications
  • PG-TDSON-8 package for compact and efficient thermal management
  • MSL1 rating up to 260°C peak reflow for ease of assembly

Applications

The IAUC24N10S5L300ATMA1 is designed for various automotive applications, including but not limited to:

  • Power management in electric vehicles and hybrid electric vehicles
  • Battery management systems
  • Motor control and drive systems
  • Power supplies and DC-DC converters
  • Other high-power automotive electronics

Q & A

  1. What is the maximum drain-source voltage of the IAUC24N10S5L300ATMA1?
    The maximum drain-source voltage is 100 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance is 30 mΩ max.
  3. What is the maximum drain current of this device?
    The maximum drain current is 24 A.
  4. Is the IAUC24N10S5L300ATMA1 AEC Q101 qualified?
    Yes, it is AEC Q101 qualified.
  5. What is the package type of this MOSFET?
    The package type is PG-TDSON-8.
  6. What is the MSL rating of this component?
    The MSL rating is MSL1 up to 260°C peak reflow.
  7. What are some typical applications of the IAUC24N10S5L300ATMA1?
    Typical applications include power management in electric vehicles, battery management systems, motor control, and power supplies.
  8. What is the gate-source voltage range for this MOSFET?
    The gate-source voltage range is ±20 V.
  9. How much power can this MOSFET dissipate?
    The power dissipation is 38 W.
  10. Is this MOSFET suitable for high-temperature environments?
    Yes, it is designed to handle high temperatures and is MSL1 rated up to 260°C peak reflow.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-33
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.11
707

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS16SH6727XTSA1
BAS16SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS4002LE6327XTMA1
BAS4002LE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA TSLP-2
BAT 54 B5003
BAT 54 B5003
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
IRF640NSTRLPBF
IRF640NSTRLPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
BSS123 E6433
BSS123 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC