IAUC24N10S5L300ATMA1
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Infineon Technologies IAUC24N10S5L300ATMA1

Manufacturer No:
IAUC24N10S5L300ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 24A TDSON-8-33
Delivery:
Payment:
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Product Introduction

Overview

The IAUC24N10S5L300ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, designed specifically for automotive applications. This device is part of the OptiMOS™ 5 family, known for its excellent electrical and thermal performance. It is AEC Q101 qualified, ensuring reliability and robustness in harsh automotive environments. The MOSFET features a logic-level gate drive, making it compatible with a wide range of control signals.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Drain Current (Id)24 A
Pulsed Drain Current (Id_pulsed)96 A
On-Resistance (Rds(on))30 mΩ max
Power Dissipation (Pd)38 W
Gate-Source Voltage (Vgs)±20 V
PackagePG-TDSON-8
MSL RatingMSL1 up to 260°C peak reflow

Key Features

  • Enhancement mode N-channel MOSFET with logic-level gate drive
  • Low on-resistance (Rds(on)) of 30 mΩ max for efficient power handling
  • High drain current of 24 A and pulsed drain current of 96 A
  • AEC Q101 qualified for reliability in automotive applications
  • PG-TDSON-8 package for compact and efficient thermal management
  • MSL1 rating up to 260°C peak reflow for ease of assembly

Applications

The IAUC24N10S5L300ATMA1 is designed for various automotive applications, including but not limited to:

  • Power management in electric vehicles and hybrid electric vehicles
  • Battery management systems
  • Motor control and drive systems
  • Power supplies and DC-DC converters
  • Other high-power automotive electronics

Q & A

  1. What is the maximum drain-source voltage of the IAUC24N10S5L300ATMA1?
    The maximum drain-source voltage is 100 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance is 30 mΩ max.
  3. What is the maximum drain current of this device?
    The maximum drain current is 24 A.
  4. Is the IAUC24N10S5L300ATMA1 AEC Q101 qualified?
    Yes, it is AEC Q101 qualified.
  5. What is the package type of this MOSFET?
    The package type is PG-TDSON-8.
  6. What is the MSL rating of this component?
    The MSL rating is MSL1 up to 260°C peak reflow.
  7. What are some typical applications of the IAUC24N10S5L300ATMA1?
    Typical applications include power management in electric vehicles, battery management systems, motor control, and power supplies.
  8. What is the gate-source voltage range for this MOSFET?
    The gate-source voltage range is ±20 V.
  9. How much power can this MOSFET dissipate?
    The power dissipation is 38 W.
  10. Is this MOSFET suitable for high-temperature environments?
    Yes, it is designed to handle high temperatures and is MSL1 rated up to 260°C peak reflow.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-33
Package / Case:8-PowerTDFN
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