BSC070N10NS3GATMA1
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Infineon Technologies BSC070N10NS3GATMA1

Manufacturer No:
BSC070N10NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 90A TDSON-8
Delivery:
Payment:
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Product Introduction

Overview

The BSC070N10NS3GATMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is designed for high-power applications requiring low on-state resistance and high current handling capabilities. The MOSFET is packaged in the PG-TDSON-8-1 surface mount package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 100 V
ID (Drain Current) 90 A (Tc)
PD (Power Dissipation) 114 W (Tc)
RDS(on) (On-State Resistance) Typically 1.1 mΩ at VGS = 10 V, ID = 60 A
Package Type PG-TDSON-8-1
Operating Temperature Range -55°C to 150°C

Key Features

  • High current handling capability of up to 90 A.
  • Low on-state resistance (RDS(on)) of typically 1.1 mΩ.
  • High power dissipation of 114 W.
  • Surface mount PG-TDSON-8-1 package for efficient thermal management.
  • Wide operating temperature range from -55°C to 150°C.

Applications

  • Power management in industrial and automotive systems.
  • Switching applications such as DC-DC converters and motor control.
  • High-power audio amplifiers and power supplies.
  • Electric vehicle charging and battery management systems.

Q & A

  1. What is the maximum drain-source voltage of the BSC070N10NS3GATMA1?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the maximum drain current of the BSC070N10NS3GATMA1?

    The maximum drain current (ID) is 90 A at Tc.

  3. What is the typical on-state resistance of the BSC070N10NS3GATMA1?

    The typical on-state resistance (RDS(on)) is 1.1 mΩ at VGS = 10 V, ID = 60 A.

  4. What is the package type of the BSC070N10NS3GATMA1?

    The package type is PG-TDSON-8-1.

  5. What is the operating temperature range of the BSC070N10NS3GATMA1?

    The operating temperature range is from -55°C to 150°C.

  6. What are some common applications of the BSC070N10NS3GATMA1?

    Common applications include power management in industrial and automotive systems, switching applications, high-power audio amplifiers, and electric vehicle charging systems.

  7. How does the BSC070N10NS3GATMA1 handle high power dissipation?

    The device is capable of handling high power dissipation of up to 114 W and is packaged in a PG-TDSON-8-1 package for efficient thermal management.

  8. Is the BSC070N10NS3GATMA1 suitable for high-current applications?

    Yes, it is suitable for high-current applications due to its high current handling capability of up to 90 A.

  9. Where can I find detailed specifications for the BSC070N10NS3GATMA1?

    Detailed specifications can be found in the datasheet available on websites such as Mouser Electronics, Digi-Key, and the official Infineon Technologies website.

  10. What is the significance of the low on-state resistance in the BSC070N10NS3GATMA1?

    The low on-state resistance reduces power losses and improves overall efficiency in power management and switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC070N10NS3GATMA1 BSC060N10NS3GATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V 4900 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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