Overview
The BC817K-25WE6327 is an NPN Silicon AF (Audio Frequency) Transistor produced by Infineon Technologies. This transistor is designed for general AF applications and is known for its high performance and reliability. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCEO) | 45 | V |
| Collector Current (IC) | 500 | mA |
| Current Gain (hFE) | 160 - 400 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | Low | V |
| Power Dissipation (Ptot) | 775 | mW |
| Junction Temperature (TJ) | 150 | °C |
| Package Type | SOT23 (TO-236AB) | - |
| Package Size | 2.9 x 1.3 x 1 mm | - |
Key Features
- High collector current of up to 500 mA
- High current gain (hFE) ranging from 160 to 400
- Low collector-emitter saturation voltage
- Pb-free (RoHS compliant) package
- Qualified according to AEC-Q101 standards
- High power dissipation capability
Applications
The BC817K-25WE6327 transistor is suitable for a variety of applications, including:
- General AF (Audio Frequency) applications
- General-purpose switching and amplification
- Automotive and industrial electronics
- Consumer and mobile devices
- Power and computing applications
Q & A
- What is the collector-base voltage of the BC817K-25WE6327 transistor?
The collector-base voltage (VCEO) is 45 V. - What is the maximum collector current of the BC817K-25WE6327 transistor?
The maximum collector current (IC) is 500 mA. - What is the current gain range of the BC817K-25WE6327 transistor?
The current gain (hFE) ranges from 160 to 400. - What is the package type of the BC817K-25WE6327 transistor?
The package type is SOT23 (TO-236AB). - Is the BC817K-25WE6327 transistor RoHS compliant?
Yes, the BC817K-25WE6327 transistor is Pb-free and RoHS compliant. - What are the potential applications of the BC817K-25WE6327 transistor?
The transistor is suitable for general AF applications, general-purpose switching and amplification, automotive and industrial electronics, consumer and mobile devices, and power and computing applications. - What is the maximum junction temperature of the BC817K-25WE6327 transistor?
The maximum junction temperature (TJ) is 150 °C. - Is the BC817K-25WE6327 transistor qualified according to any automotive standards?
Yes, it is qualified according to AEC-Q101 standards. - What is the power dissipation capability of the BC817K-25WE6327 transistor?
The power dissipation (Ptot) is up to 775 mW. - Where can I find more detailed specifications and models for the BC817K-25WE6327 transistor?
You can find detailed specifications, SPICE models, and thermal models on the official Infineon Technologies website or through distributors like Nexperia.
