BC817K-25E6327
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Infineon Technologies BC817K-25E6327

Manufacturer No:
BC817K-25E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K-25E6327 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for general-purpose applications and is known for its high performance and reliability. It is packaged in a SOT-23 format, which is compact and suitable for a wide range of electronic devices.

Key Specifications

ParameterValueUnit
Collector Current (IC)500 mAA
Collector-Emitter Voltage (VCE)45 VV
Base-Emitter Voltage (VBE)0.7 VV
Collector-Emitter Saturation Voltage (VCEsat)0.2 VV
Current Gain (hFE)100-600-
Operating Temperature Range-55 to 150 °C°C
Package TypeSOT-23-
RoHS ComplianceYes-

Key Features

  • High collector current of up to 500 mA
  • High current gain (hFE) ranging from 100 to 600
  • Low collector-emitter saturation voltage (VCEsat) of 0.2 V
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q102 standards for automotive applications

Applications

The BC817K-25E6327 is suitable for various general-purpose AF applications, including audio amplifiers, switching circuits, and other electronic devices that require high current gain and low saturation voltage.

Q & A

  1. What is the package type of the BC817K-25E6327 transistor?
    The BC817K-25E6327 is packaged in a SOT-23 format.
  2. What is the maximum collector current of the BC817K-25E6327?
    The maximum collector current is 500 mA.
  3. Is the BC817K-25E6327 RoHS compliant?
    Yes, the BC817K-25E6327 is Pb-free and RoHS compliant.
  4. What are the typical applications of the BC817K-25E6327?
    The transistor is used in general AF applications, including audio amplifiers and switching circuits.
  5. What is the operating temperature range of the BC817K-25E6327?
    The operating temperature range is -55 to 150 °C.
  6. What is the collector-emitter saturation voltage (VCEsat) of the BC817K-25E6327?
    The collector-emitter saturation voltage is 0.2 V.
  7. What is the current gain (hFE) range of the BC817K-25E6327?
    The current gain ranges from 100 to 600.
  8. Is the BC817K-25E6327 qualified for automotive applications?
    Yes, it is qualified according to AEC Q102 standards.
  9. What is the base-emitter voltage (VBE) of the BC817K-25E6327?
    The base-emitter voltage is approximately 0.7 V.
  10. What is the maximum collector-emitter voltage (VCE) of the BC817K-25E6327?
    The maximum collector-emitter voltage is 45 V.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC817K-25E6327 BC817K-25WE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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