Overview
The MMBF170Q-13-F is a high-performance N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed for a wide range of applications requiring low on-resistance, fast switching speeds, and high reliability. The MOSFET features a drain to source voltage (Vdss) of 60V, a continuous drain current (Id) of 500mA at 25°C, and a maximum power dissipation of 300mW. It is packaged in a SOT-23-3 surface mount package, making it suitable for compact and efficient circuit designs.
Key Specifications
Characteristic | Value | Units |
---|---|---|
Part Number | MMBF170Q-13-F | - |
Manufacturer | Diodes Incorporated | - |
FET Type | N-Channel | - |
Technology | MOSFET (Metal Oxide) | - |
Drain to Source Voltage (Vdss) | 60 | V |
Current - Continuous Drain (Id) @ 25°C | 500mA | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 10V | - |
Vgs(th) (Max) @ Id | 3V @ 250µA | - |
Vgs (Max) | ±20V | - |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | - |
Power Dissipation (Max) | 300mW (Ta) | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - |
Mounting Type | Surface Mount | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | - |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | - |
Key Features
- Low On-Resistance: Ensures minimal power loss during operation.
- Low Gate Threshold Voltage: Facilitates easy switching and control.
- Low Input Capacitance: Reduces the impact on high-frequency circuits.
- Fast Switching Speed: Suitable for high-speed applications.
- Low Input/Output Leakage: Minimizes current leakage, enhancing overall efficiency.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
- Halogen and Antimony Free: Classified as a 'Green' device, adhering to stringent environmental guidelines.
- Qualified to AEC-Q101 Standards: Ensures high reliability for automotive and other critical applications.
- PPAP Capable: Supports Production Part Approval Process for automotive and other industries.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power switching, voltage regulation, and power amplification.
- Consumer Electronics: Used in a variety of consumer electronic devices requiring efficient power management.
- Industrial Control: Applied in industrial control systems, motor control, and other high-reliability applications.
- Communication Devices: Utilized in communication equipment for efficient power handling.
Q & A
- What is the drain to source voltage (Vdss) of the MMBF170Q-13-F MOSFET?
The drain to source voltage (Vdss) is 60V.
- What is the continuous drain current (Id) at 25°C for this MOSFET?
The continuous drain current (Id) at 25°C is 500mA.
- What is the maximum power dissipation of the MMBF170Q-13-F?
The maximum power dissipation is 300mW.
- What is the operating temperature range for this MOSFET?
The operating temperature range is -55°C to 150°C (TJ).
- Is the MMBF170Q-13-F RoHS compliant?
Yes, the MMBF170Q-13-F is fully RoHS compliant and lead-free.
- What is the package type of the MMBF170Q-13-F?
The package type is SOT-23-3.
- What are the key features of the MMBF170Q-13-F MOSFET?
Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
- Is the MMBF170Q-13-F qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.
- What is the moisture sensitivity level (MSL) of the MMBF170Q-13-F?
The moisture sensitivity level (MSL) is 1 (Unlimited).
- What is the maximum gate-source voltage (Vgs) for this MOSFET?
The maximum gate-source voltage (Vgs) is ±20V.