MMBF170Q-13-F
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Diodes Incorporated MMBF170Q-13-F

Manufacturer No:
MMBF170Q-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The MMBF170Q-13-F is a high-performance N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed for a wide range of applications requiring low on-resistance, fast switching speeds, and high reliability. The MOSFET features a drain to source voltage (Vdss) of 60V, a continuous drain current (Id) of 500mA at 25°C, and a maximum power dissipation of 300mW. It is packaged in a SOT-23-3 surface mount package, making it suitable for compact and efficient circuit designs.

Key Specifications

Characteristic Value Units
Part Number MMBF170Q-13-F -
Manufacturer Diodes Incorporated -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 500mA -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V -
Power Dissipation (Max) 300mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Key Features

  • Low On-Resistance: Ensures minimal power loss during operation.
  • Low Gate Threshold Voltage: Facilitates easy switching and control.
  • Low Input Capacitance: Reduces the impact on high-frequency circuits.
  • Fast Switching Speed: Suitable for high-speed applications.
  • Low Input/Output Leakage: Minimizes current leakage, enhancing overall efficiency.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
  • Halogen and Antimony Free: Classified as a 'Green' device, adhering to stringent environmental guidelines.
  • Qualified to AEC-Q101 Standards: Ensures high reliability for automotive and other critical applications.
  • PPAP Capable: Supports Production Part Approval Process for automotive and other industries.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Power Management: Ideal for power switching, voltage regulation, and power amplification.
  • Consumer Electronics: Used in a variety of consumer electronic devices requiring efficient power management.
  • Industrial Control: Applied in industrial control systems, motor control, and other high-reliability applications.
  • Communication Devices: Utilized in communication equipment for efficient power handling.

Q & A

  1. What is the drain to source voltage (Vdss) of the MMBF170Q-13-F MOSFET?

    The drain to source voltage (Vdss) is 60V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 500mA.

  3. What is the maximum power dissipation of the MMBF170Q-13-F?

    The maximum power dissipation is 300mW.

  4. What is the operating temperature range for this MOSFET?

    The operating temperature range is -55°C to 150°C (TJ).

  5. Is the MMBF170Q-13-F RoHS compliant?

    Yes, the MMBF170Q-13-F is fully RoHS compliant and lead-free.

  6. What is the package type of the MMBF170Q-13-F?

    The package type is SOT-23-3.

  7. What are the key features of the MMBF170Q-13-F MOSFET?

    Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  8. Is the MMBF170Q-13-F qualified for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  9. What is the moisture sensitivity level (MSL) of the MMBF170Q-13-F?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. What is the maximum gate-source voltage (Vgs) for this MOSFET?

    The maximum gate-source voltage (Vgs) is ±20V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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MMBF170Q-13-F
MMBF170Q-13-F
MOSFET N-CH 60V 500MA SOT23

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