BSS84Q-13-F
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Diodes Incorporated BSS84Q-13-F

Manufacturer No:
BSS84Q-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
BSS FAMILY SOT23 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84Q-13-F is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to meet the stringent requirements of automotive and other high-reliability applications. It is qualified to AEC-Q101, supported by a PPAP, and manufactured in IATF 16949 certified facilities. The BSS84Q-13-F is known for its low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it ideal for various power management and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (BVDSS) -50 V
Drain-Source On-Resistance (RDS(ON)) 3.2 - 10 Ω @ VGS = -5V, ID = -0.100A
Gate Threshold Voltage (VGS(TH)) -0.8 - -2.0 V @ VDS = VGS, ID = -1mA
Input Capacitance (Ciss) 24.6 - 45 pF @ VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance (Coss) 4.7 - 25 pF @ VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance (Crss) 2.8 - 12 pF @ VDS = -25V, VGS = 0V, f = 1.0MHz
Gate Resistance (Rg) 916 Ω @ VDS = 0V, VGS = 0V
Package SOT23
Case Material UL Flammability Classification Rating 94V-0
Moisture Sensitivity Level 1 per J-STD-020
Terminals Matte Tin Finish (Lead Free Plating)
Weight Approximately 0.009 grams

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities

Applications

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • Automotive applications requiring specific change control

Q & A

  1. What is the maximum drain-source voltage (BVDSS) of the BSS84Q-13-F?

    The maximum drain-source voltage (BVDSS) is -50V.

  2. What is the typical on-resistance (RDS(ON)) of the BSS84Q-13-F?

    The typical on-resistance (RDS(ON)) is 3.2 - 10 Ω at VGS = -5V and ID = -0.100A.

  3. What is the gate threshold voltage (VGS(TH)) range of the BSS84Q-13-F?

    The gate threshold voltage (VGS(TH)) range is -0.8 to -2.0 V.

  4. What is the input capacitance (Ciss) of the BSS84Q-13-F?

    The input capacitance (Ciss) is 24.6 - 45 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

  5. Is the BSS84Q-13-F RoHS compliant?

    Yes, the BSS84Q-13-F is totally lead-free and fully RoHS compliant.

  6. What is the package type of the BSS84Q-13-F?

    The package type is SOT23.

  7. What are the typical applications of the BSS84Q-13-F?

    Typical applications include general purpose interfacing switches, power management functions, analog switches, and automotive applications.

  8. Is the BSS84Q-13-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  9. What is the moisture sensitivity level of the BSS84Q-13-F?

    The moisture sensitivity level is Level 1 per J-STD-020.

  10. What is the weight of the BSS84Q-13-F?

    The weight is approximately 0.009 grams.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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