BAT54TQ-7-F
  • Share:

Diodes Incorporated BAT54TQ-7-F

Manufacturer No:
BAT54TQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE SOT523 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54TQ-7-F is a surface mount Schottky Barrier Diode manufactured by Diodes Incorporated. This component is part of the BAT54 series and is known for its low forward voltage drop and fast switching capabilities. It is packaged in an ultra-small SOT523 package, making it ideal for applications where space is limited. The diode is designed with a PN Junction Guard Ring for transient and ESD protection, ensuring robust performance in various environments. It is also fully RoHS compliant and lead-free, aligning with environmental regulations.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V
Forward Continuous Current IFM 200 mA
Repetitive Peak Forward Current IFRM 300 mA
Non-Repetitive Peak Forward Surge Current IFSM 600 mA
Forward Voltage VF 0.24 - 0.32 V
Reverse Leakage Current IR 2.0 μA
Total Capacitance CT 10 pF
Power Dissipation PD 150 mW
Thermal Resistance, Junction to Ambient RθJA 490 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package SOT523

Key Features

  • Ultra-Small Surface Mount Package: The BAT54TQ-7-F is packaged in the SOT523 package, making it suitable for space-constrained applications.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, typically ranging from 0.24 to 0.32 volts.
  • Fast Switching: It offers fast switching capabilities, making it ideal for high-frequency applications.
  • PN Junction Guard Ring for Transient and ESD Protection: This feature provides protection against transient and electrostatic discharge (ESD) events.
  • Totally Lead-Free & Fully RoHS Compliant: The device is lead-free and fully compliant with RoHS regulations, ensuring environmental sustainability.
  • Halogen and Antimony Free: The diode is free from halogen and antimony, further enhancing its environmental credentials.
  • AEC-Q101 Qualified: Suitable for automotive applications, the BAT54TQ-7-F is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.

Applications

The BAT54TQ-7-F is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics requiring high reliability and specific change control.
  • High-Frequency Switching Circuits: The fast switching capability makes it ideal for high-frequency switching applications.
  • Power Management: It can be used in power management circuits due to its low forward voltage drop and high current handling.
  • Consumer Electronics: The ultra-small package and low power consumption make it suitable for use in consumer electronics where space and efficiency are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the BAT54TQ-7-F?

    The peak repetitive reverse voltage (VRRM) is 30 volts.

  2. What is the forward continuous current rating of the BAT54TQ-7-F?

    The forward continuous current (IFM) is 200 mA.

  3. What is the typical forward voltage drop of the BAT54TQ-7-F?

    The typical forward voltage drop (VF) ranges from 0.24 to 0.32 volts.

  4. Is the BAT54TQ-7-F RoHS compliant?

    Yes, the BAT54TQ-7-F is fully RoHS compliant and lead-free.

  5. What is the operating temperature range of the BAT54TQ-7-F?

    The operating and storage temperature range is -65 to +150 °C.

  6. What package type is used for the BAT54TQ-7-F?

    The BAT54TQ-7-F is packaged in an SOT523 package.

  7. Does the BAT54TQ-7-F have any special protection features?

    Yes, it has a PN Junction Guard Ring for transient and ESD protection.

  8. Is the BAT54TQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive applications requiring specific change control.

  9. What is the power dissipation rating of the BAT54TQ-7-F?

    The power dissipation (PD) is 150 mW.

  10. What is the thermal resistance, junction to ambient, of the BAT54TQ-7-F?

    The thermal resistance, junction to ambient (RθJA), is 490 °C/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.10
4,831

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAT54TQ-7-F BAT54WQ-7-F BAT54Q-7-F BAT54T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 800 mV @ 100 mA 1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-523 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SOT-523
Supplier Device Package SOT-523 SOT-323 SOT-23-3 SOT-523
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 125°C -65°C ~ 150°C -65°C ~ 125°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

BAS40TW-7-F
BAS40TW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
BAS40-7-F-31
BAS40-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BZX84C9V1S-7
BZX84C9V1S-7
Diodes Incorporated
DIODE ZENER ARRAY 9.1V SOT363
BZX84C36-7
BZX84C36-7
Diodes Incorporated
DIODE ZENER 36V 300MW SOT23-3
BCP53TA
BCP53TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
BC847AW-7-F
BC847AW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE