Overview
The BAS70-04Q-7-F is a 70mA surface-mount Schottky Barrier Diode manufactured by Diodes Incorporated. It is packaged in an SOT23 case and is designed to offer low-forward voltage drop and fast switching capability. This diode is equipped with a PN Junction Guard Ring for transient and ESD protection, making it suitable for a variety of high-reliability applications. The BAS70-04Q-7-F is also AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 70 | V |
| Working Peak Reverse Voltage | VRWM | 70 | V |
| Maximum Forward Continuous Current | IFM | 70 | mA |
| Non-Repetitive Peak Forward Surge Current | IFSM | 100 | mA |
| Forward Voltage Drop | VF | 0.41 | V @ IF = 1.0 mA |
| Maximum Reverse Current | IR | 0.1 | µA @ VR = 50 V |
| Total Capacitance | CT | 2.0 | pF @ VR = 0 V, f = 1.0 MHz |
| Reverse Recovery Time | tRR | 5.0 ns / 2.0 ns (for BAS70-04 only) | |
| Operating Junction Temperature Range | TJ | -55 to +125 | °C |
| Storage Temperature Range | TSTG | -65 to +150 | °C |
| Package | SOT23 | ||
| Package Material | Molded Plastic | ||
| UL Flammability Classification Rating | 94V-0 | ||
| Moisture Sensitivity | Level 1 per J-STD-020 | ||
| Terminals | Solderable per MIL-STD-202, Method 208 | ||
| Weight | 0.008 grams (Approximate) |
Key Features
- Low Turn-On Voltage: The BAS70-04Q-7-F features a low forward voltage drop of 0.41 V at 1.0 mA, making it efficient in various applications.
- Fast Switching: This diode is designed for fast switching capabilities, which is crucial in high-speed circuits.
- PN Junction Guard Ring for Transient and ESD Protection: The diode includes a PN Junction Guard Ring to protect against transient and ESD events.
- Totally Lead-Free & Fully RoHS Compliant: The device is fully compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3), and is halogen and antimony free.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications, this diode is AEC-Q101 qualified and PPAP capable, ensuring high reliability.
- Manufactured in IATF 16949 Certified Facilities: Ensures adherence to strict quality standards.
Applications
- Automotive Systems: Given its AEC-Q101 qualification and PPAP capability, it is ideal for use in automotive applications where high reliability is critical.
- High-Speed Switching Circuits: The fast switching capability makes it suitable for high-speed switching applications.
- Transient and ESD Protection: The PN Junction Guard Ring makes it effective in protecting against transient and ESD events in various electronic systems.
- General Purpose Rectification: Can be used in general purpose rectification applications where low forward voltage drop is required.
Q & A
- What is the peak repetitive reverse voltage of the BAS70-04Q-7-F?
The peak repetitive reverse voltage (VRRM) is 70 V.
- What is the maximum forward continuous current of the BAS70-04Q-7-F?
The maximum forward continuous current (IFM) is 70 mA.
- What is the forward voltage drop of the BAS70-04Q-7-F at 1.0 mA?
The forward voltage drop (VF) at 1.0 mA is 0.41 V.
- Is the BAS70-04Q-7-F RoHS compliant?
Yes, the BAS70-04Q-7-F is fully RoHS compliant and lead-free.
- What is the operating junction temperature range of the BAS70-04Q-7-F?
The operating junction temperature range (TJ) is -55 to +125 °C.
- What is the storage temperature range of the BAS70-04Q-7-F?
The storage temperature range (TSTG) is -65 to +150 °C.
- What package type is the BAS70-04Q-7-F available in?
The BAS70-04Q-7-F is available in an SOT23 package.
- Is the BAS70-04Q-7-F suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the reverse recovery time of the BAS70-04Q-7-F?
The reverse recovery time (tRR) is 5.0 ns, and 2.0 ns for the BAS70-04 specifically.
- What is the total capacitance of the BAS70-04Q-7-F?
The total capacitance (CT) is 2.0 pF at VR = 0 V and f = 1.0 MHz.
