BAS70-06Q-7-F
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Diodes Incorporated BAS70-06Q-7-F

Manufacturer No:
BAS70-06Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-06Q-7-F is a surface mount Schottky barrier diode manufactured by Diodes Incorporated. This device is packaged in a SOT23 case and is designed to offer low forward voltage drop and fast-switching capabilities. It features a PN junction guard ring for transient and ESD protection, making it suitable for a variety of applications requiring high reliability and robustness.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Peak Repetitive Reverse Voltage VRRM 70 V
Maximum Forward Continuous Current IFM 70 mA
Non-Repetitive Peak Forward Surge Current IFSM 100 mA t ≤ 1.0s
Forward Voltage VF 410 mV @ 1.0 mA, 1000 mV @ 15 mA tp < 300 µs
Reverse Current IR 100 nA VR = 50 V
Total Capacitance CT 1.7 pF VR = 0 V, f = 1.0 MHz
Reverse Recovery Time tRR 2.5 ns IF = IR = 10 mA to IR = 1.0 mA, RL = 100 Ω
Typical Power Dissipation PD 200 mW
Thermal Resistance Junction to Ambient Air RθJA 600 °C/W
Operating Junction Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C

Key Features

  • Low Turn-On Voltage: The BAS70-06Q-7-F features a low forward voltage drop, making it efficient for various applications.
  • Fast Switching: This diode is designed for fast-switching capabilities, enhancing its performance in high-speed applications.
  • PN Junction Guard Ring for Transient and ESD Protection: Provides robust protection against transient and electrostatic discharge (ESD) events.
  • Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3), ensuring environmental sustainability.
  • Halogen and Antimony Free. “Green” Device: Free from halogen and antimony, aligning with green technology standards.
  • Qualified to AEC-Q101 Standards for High Reliability: Meets the stringent requirements of the automotive industry, ensuring high reliability.
  • PPAP Capable: Capable of undergoing Production Part Approval Process (PPAP), further ensuring quality and reliability.

Applications

The BAS70-06Q-7-F is suitable for a wide range of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive electronics where high reliability is crucial.
  • Power Supply Systems: Its low forward voltage drop and fast-switching capabilities make it a good choice for power supply circuits.
  • High-Speed Switching Circuits: The fast-switching feature of this diode makes it suitable for high-speed switching applications.
  • ESD Protection Circuits: The PN junction guard ring provides effective protection against ESD events, making it useful in ESD protection circuits.

Q & A

  1. What is the maximum forward continuous current of the BAS70-06Q-7-F?

    The maximum forward continuous current is 70 mA.

  2. What is the peak repetitive reverse voltage of the BAS70-06Q-7-F?

    The peak repetitive reverse voltage is 70 V.

  3. What is the typical thermal resistance junction to ambient air for the BAS70-06Q-7-F?

    The typical thermal resistance junction to ambient air is 600 °C/W.

  4. Is the BAS70-06Q-7-F RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  5. What is the operating junction temperature range of the BAS70-06Q-7-F?

    The operating junction temperature range is -55 to +125 °C.

  6. Does the BAS70-06Q-7-F have any ESD protection features?

    Yes, it features a PN junction guard ring for transient and ESD protection.

  7. What is the storage temperature range for the BAS70-06Q-7-F?

    The storage temperature range is -65 to +150 °C.

  8. Is the BAS70-06Q-7-F suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.

  9. What is the package type of the BAS70-06Q-7-F?

    The package type is SOT23.

  10. What is the typical power dissipation of the BAS70-06Q-7-F?

    The typical power dissipation is 200 mW.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):2.5 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Operating Temperature - Junction:-55°C ~ 125°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BAS70-06Q-7-F BAS70-06T-7-F BAS70-04Q-7-F BAS70-05Q-7-F BAS70-06-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode 1 Pair Series Connection 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 70mA (DC) 70mA (DC) 70mA (DC) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 2.5 ns 5 ns - 2.5 ns 5 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3 SOT-23-3 SOT-23-3

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