BAS70-06Q-7-F
  • Share:

Diodes Incorporated BAS70-06Q-7-F

Manufacturer No:
BAS70-06Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-06Q-7-F is a surface mount Schottky barrier diode manufactured by Diodes Incorporated. This device is packaged in a SOT23 case and is designed to offer low forward voltage drop and fast-switching capabilities. It features a PN junction guard ring for transient and ESD protection, making it suitable for a variety of applications requiring high reliability and robustness.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Peak Repetitive Reverse Voltage VRRM 70 V
Maximum Forward Continuous Current IFM 70 mA
Non-Repetitive Peak Forward Surge Current IFSM 100 mA t ≤ 1.0s
Forward Voltage VF 410 mV @ 1.0 mA, 1000 mV @ 15 mA tp < 300 µs
Reverse Current IR 100 nA VR = 50 V
Total Capacitance CT 1.7 pF VR = 0 V, f = 1.0 MHz
Reverse Recovery Time tRR 2.5 ns IF = IR = 10 mA to IR = 1.0 mA, RL = 100 Ω
Typical Power Dissipation PD 200 mW
Thermal Resistance Junction to Ambient Air RθJA 600 °C/W
Operating Junction Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C

Key Features

  • Low Turn-On Voltage: The BAS70-06Q-7-F features a low forward voltage drop, making it efficient for various applications.
  • Fast Switching: This diode is designed for fast-switching capabilities, enhancing its performance in high-speed applications.
  • PN Junction Guard Ring for Transient and ESD Protection: Provides robust protection against transient and electrostatic discharge (ESD) events.
  • Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3), ensuring environmental sustainability.
  • Halogen and Antimony Free. “Green” Device: Free from halogen and antimony, aligning with green technology standards.
  • Qualified to AEC-Q101 Standards for High Reliability: Meets the stringent requirements of the automotive industry, ensuring high reliability.
  • PPAP Capable: Capable of undergoing Production Part Approval Process (PPAP), further ensuring quality and reliability.

Applications

The BAS70-06Q-7-F is suitable for a wide range of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive electronics where high reliability is crucial.
  • Power Supply Systems: Its low forward voltage drop and fast-switching capabilities make it a good choice for power supply circuits.
  • High-Speed Switching Circuits: The fast-switching feature of this diode makes it suitable for high-speed switching applications.
  • ESD Protection Circuits: The PN junction guard ring provides effective protection against ESD events, making it useful in ESD protection circuits.

Q & A

  1. What is the maximum forward continuous current of the BAS70-06Q-7-F?

    The maximum forward continuous current is 70 mA.

  2. What is the peak repetitive reverse voltage of the BAS70-06Q-7-F?

    The peak repetitive reverse voltage is 70 V.

  3. What is the typical thermal resistance junction to ambient air for the BAS70-06Q-7-F?

    The typical thermal resistance junction to ambient air is 600 °C/W.

  4. Is the BAS70-06Q-7-F RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  5. What is the operating junction temperature range of the BAS70-06Q-7-F?

    The operating junction temperature range is -55 to +125 °C.

  6. Does the BAS70-06Q-7-F have any ESD protection features?

    Yes, it features a PN junction guard ring for transient and ESD protection.

  7. What is the storage temperature range for the BAS70-06Q-7-F?

    The storage temperature range is -65 to +150 °C.

  8. Is the BAS70-06Q-7-F suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.

  9. What is the package type of the BAS70-06Q-7-F?

    The package type is SOT23.

  10. What is the typical power dissipation of the BAS70-06Q-7-F?

    The typical power dissipation is 200 mW.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):2.5 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Operating Temperature - Junction:-55°C ~ 125°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.07
13,285

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS70-06Q-7-F BAS70-06T-7-F BAS70-04Q-7-F BAS70-05Q-7-F BAS70-06-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode 1 Pair Series Connection 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 70mA (DC) 70mA (DC) 70mA (DC) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 2.5 ns 5 ns - 2.5 ns 5 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70E6327HTSA1
BAV70E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99STB6_R1_00001
BAV99STB6_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAV70-7-F
BAV70-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT23-3
STPS20150CG-TR
STPS20150CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
MBR2545CT-1
MBR2545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
BAW56WE6327HTSA1
BAW56WE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAW56T,115
BAW56T,115
NXP USA Inc.
DIODE ARRAY GP 90V 150MA SC75
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB

Related Product By Brand

BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
1N4148WS-7-F
1N4148WS-7-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOD323
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BZX84C4V3TS-7-F
BZX84C4V3TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 4.3V SOT363
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZX84C39TS-7-F
BZX84C39TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZX84B5V1-7-F
BZX84B5V1-7-F
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZT52HC20WF-7
BZT52HC20WF-7
Diodes Incorporated
DIODE ZENER 20V SOD123F T&R 3K
74LVC1G08FW4-7
74LVC1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6