2N7002-13-F
  • Share:

Diodes Incorporated 2N7002-13-F

Manufacturer No:
2N7002-13-F
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-13-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a small SOT23 surface-mount package and is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability.

Key Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10µA
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 3.2 - 7.5 VGS = 5V, ID = 0.05A
Continuous Drain Current ID 210 mA VGS = 10V, TA = +25°C
Input Capacitance Ciss 22 - 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 - 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 2.0 - 5.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 120 Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Package SOT23
Weight 0.009 grams (approximate)

Key Features

  • Low On-Resistance: Minimized on-state resistance for high efficiency.
  • Low Gate Threshold Voltage: Easy to switch on with low gate voltage.
  • Low Input Capacitance: Reduces the gate drive requirements.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Small Surface Mount Package: SOT23 package for compact designs.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulations.
  • Halogen and Antimony Free: “Green” device with reduced environmental impact.
  • Qualified to AEC-Q101 Standards: High reliability for automotive and other critical applications.

Applications

  • Motor Control: Suitable for motor control circuits due to its high efficiency and fast switching speed.
  • Power Management Functions: Ideal for various power management applications requiring low on-resistance and fast switching.

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002-13-F?

    The drain-source breakdown voltage (BVDSS) is 60V.

  2. What is the typical on-state resistance of the 2N7002-13-F?

    The typical on-state resistance (RDS(ON)) is 3.2 - 7.5 Ω at VGS = 5V.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) is 210mA at VGS = 10V and TA = +25°C.

  4. What is the input capacitance of the 2N7002-13-F?

    The input capacitance (Ciss) is 22 - 50 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  5. Is the 2N7002-13-F RoHS compliant?

    Yes, the 2N7002-13-F is totally lead-free and fully RoHS compliant.

  6. What is the package type of the 2N7002-13-F?

    The package type is SOT23.

  7. What are the typical applications of the 2N7002-13-F?

    Typical applications include motor control and power management functions.

  8. Is the 2N7002-13-F qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards for high reliability, and an automotive-compliant part (2N7002Q) is also available.

  9. What is the weight of the 2N7002-13-F?

    The weight is approximately 0.009 grams.

  10. What is the moisture sensitivity level of the 2N7002-13-F?

    The moisture sensitivity level is 1 per J-STD-020.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
338

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAW56WQ-7-F
BAW56WQ-7-F
Diodes Incorporated
FAST SWITCHING DIODE SOT323 T&R
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
BAT54TW-7
BAT54TW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS138WQ-13-F
BSS138WQ-13-F
Diodes Incorporated
BSS FAMILY SOT323 T&R 10K
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353