2N7002-13-F
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Diodes Incorporated 2N7002-13-F

Manufacturer No:
2N7002-13-F
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-13-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a small SOT23 surface-mount package and is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability.

Key Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10µA
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 3.2 - 7.5 VGS = 5V, ID = 0.05A
Continuous Drain Current ID 210 mA VGS = 10V, TA = +25°C
Input Capacitance Ciss 22 - 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 - 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 2.0 - 5.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 120 Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Package SOT23
Weight 0.009 grams (approximate)

Key Features

  • Low On-Resistance: Minimized on-state resistance for high efficiency.
  • Low Gate Threshold Voltage: Easy to switch on with low gate voltage.
  • Low Input Capacitance: Reduces the gate drive requirements.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Small Surface Mount Package: SOT23 package for compact designs.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulations.
  • Halogen and Antimony Free: “Green” device with reduced environmental impact.
  • Qualified to AEC-Q101 Standards: High reliability for automotive and other critical applications.

Applications

  • Motor Control: Suitable for motor control circuits due to its high efficiency and fast switching speed.
  • Power Management Functions: Ideal for various power management applications requiring low on-resistance and fast switching.

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002-13-F?

    The drain-source breakdown voltage (BVDSS) is 60V.

  2. What is the typical on-state resistance of the 2N7002-13-F?

    The typical on-state resistance (RDS(ON)) is 3.2 - 7.5 Ω at VGS = 5V.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) is 210mA at VGS = 10V and TA = +25°C.

  4. What is the input capacitance of the 2N7002-13-F?

    The input capacitance (Ciss) is 22 - 50 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  5. Is the 2N7002-13-F RoHS compliant?

    Yes, the 2N7002-13-F is totally lead-free and fully RoHS compliant.

  6. What is the package type of the 2N7002-13-F?

    The package type is SOT23.

  7. What are the typical applications of the 2N7002-13-F?

    Typical applications include motor control and power management functions.

  8. Is the 2N7002-13-F qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards for high reliability, and an automotive-compliant part (2N7002Q) is also available.

  9. What is the weight of the 2N7002-13-F?

    The weight is approximately 0.009 grams.

  10. What is the moisture sensitivity level of the 2N7002-13-F?

    The moisture sensitivity level is 1 per J-STD-020.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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