CSD25485F5T
  • Share:

Texas Instruments CSD25485F5T

Manufacturer No:
CSD25485F5T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.3A 3PICOSTAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD25485F5T is a -20-V P-channel NexFET™ power MOSFET produced by Texas Instruments. This device is part of the FemtoFET™ family, known for its ultra-low profile and high performance. The CSD25485F5T is packaged in a PicoStar (YJK) package, which is a leadless, surface-mount design with a compact footprint of 1.53 mm x 0.77 mm and a maximum height of 0.36 mm. This MOSFET is designed to provide low on-state resistance and high efficiency, making it suitable for a variety of applications where space and power efficiency are critical.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS (Drain-to-Source Voltage) VGS = 0 V, IDS = –250 μA -20 - -20 V
VGS (Gate-to-Source Voltage) - - -12 V
ID (Continuous Drain Current) - -3.2 -5.3 A
IDM (Pulsed Drain Current) Pulse duration ≤ 100 μs, duty cycle ≤ 1% -31 - -31 A
PD (Power Dissipation) - 0.5 1.4 W
VGS(th) (Gate-to-Source Threshold Voltage) VDS = VGS, IDS = –250 μA -1.3 -0.95 -0.7 V
RDS(on) (Drain-to-Source On Resistance) VGS = –4.5 V, IDS = –0.9 A 35 - 42 mΩ
TJ (Operating Junction Temperature) - -55 - 150 °C

Key Features

  • Ultra-Low Profile: The CSD25485F5T features a very low profile of 0.36 mm, making it ideal for space-constrained applications.
  • Low On-State Resistance: With RDS(on) as low as 29.7 mΩ at VGS = –8 V, this MOSFET offers high efficiency and low power loss.
  • High Current Capability: The device can handle continuous drain currents up to –3.2 A and pulsed drain currents up to –31 A.
  • Gate ESD Protection: The MOSFET includes gate ESD protection, enhancing its reliability in various operating conditions.
  • Wide Operating Temperature Range: The device operates over a temperature range of –55°C to 150°C, making it suitable for diverse applications.

Applications

  • Portable Electronics: The compact size and low power consumption make it ideal for use in smartphones, tablets, and other portable devices.
  • Automotive Systems: Suitable for automotive applications due to its wide operating temperature range and high reliability.
  • Industrial Control Systems: Used in industrial control systems where space is limited and high efficiency is required.
  • Power Management Systems: Employed in power management systems for its low on-state resistance and high current handling capabilities.

Q & A

  1. What is the maximum drain-to-source voltage for the CSD25485F5T?

    The maximum drain-to-source voltage (VDS) is –20 V.

  2. What is the typical on-state resistance of the CSD25485F5T at VGS = –4.5 V?

    The typical on-state resistance (RDS(on)) at VGS = –4.5 V is 35 mΩ.

  3. What is the continuous drain current rating for the CSD25485F5T?

    The continuous drain current (ID) rating is –3.2 A.

  4. What is the operating temperature range for the CSD25485F5T?

    The operating temperature range is –55°C to 150°C.

  5. What type of package does the CSD25485F5T come in?

    The CSD25485F5T comes in a PicoStar (YJK) package, which is a leadless, surface-mount design.

  6. What is the maximum height of the PicoStar package?

    The maximum height of the PicoStar package is 0.36 mm.

  7. Does the CSD25485F5T have gate ESD protection?

    Yes, the CSD25485F5T includes gate ESD protection.

  8. What is the typical junction-to-ambient thermal resistance for the CSD25485F5T?

    The typical junction-to-ambient thermal resistance (RθJA) is 90°C/W for devices mounted on FR4 material with 1-in^2 (6.45-cm^2), 2-oz (0.071-mm) thick Cu.

  9. What are some common applications for the CSD25485F5T?

    Common applications include portable electronics, automotive systems, industrial control systems, and power management systems.

  10. How many pins does the PicoStar package have?

    The PicoStar package has 3 pins.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 4.5 V
Vgs (Max):-12V
Input Capacitance (Ciss) (Max) @ Vds:533 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$1.02
649

Please send RFQ , we will respond immediately.

Same Series
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD25485F5T CSD25485F5
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 8V
Rds On (Max) @ Id, Vgs 35mOhm @ 900mA, 8V 35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4.5 V 3.5 nC @ 4.5 V
Vgs (Max) -12V -12V
Input Capacitance (Ciss) (Max) @ Vds 533 pF @ 10 V 533 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

TMS320VC5407ZGU
TMS320VC5407ZGU
Texas Instruments
IC DGTL SIGNAL PROCESSOR 144-BGA
MSP430FR2422IPW16R
MSP430FR2422IPW16R
Texas Instruments
IC MCU 16BIT 7.5KB FRAM 16TSSOP
TS5A4597DCKR
TS5A4597DCKR
Texas Instruments
IC SWITCH SPST SC70-5
CD74HC4051QM96Q1
CD74HC4051QM96Q1
Texas Instruments
IC MUX/DEMUX 8X1 16-SOIC
DS90LV048ATMTCX/NOPB
DS90LV048ATMTCX/NOPB
Texas Instruments
IC RECEIVER 0/4 16TSSOP
SN65HVD72DR
SN65HVD72DR
Texas Instruments
IC TRANSCEIVER HALF 1/1 8SOIC
SN75172DWG4
SN75172DWG4
Texas Instruments
IC DRIVER 4/0 20SOIC
LMP8645HVMKE/NOPB
LMP8645HVMKE/NOPB
Texas Instruments
IC CURR SENSE 1CIRC SOT23-THIN
SN74AXC1T45DBVR
SN74AXC1T45DBVR
Texas Instruments
IC TRNSLTR BIDIRECTIONAL SOT23-6
TPS22965QWDSGTQ1
TPS22965QWDSGTQ1
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8WSON
TPS54240DGQR
TPS54240DGQR
Texas Instruments
IC REG BCK SPLIT RAIL ADJ 10MSOP
TPS78618DCQ
TPS78618DCQ
Texas Instruments
IC REG LINEAR 1.8V 1.5A SOT223-6