CSD25485F5T
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Texas Instruments CSD25485F5T

Manufacturer No:
CSD25485F5T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.3A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD25485F5T is a -20-V P-channel NexFET™ power MOSFET produced by Texas Instruments. This device is part of the FemtoFET™ family, known for its ultra-low profile and high performance. The CSD25485F5T is packaged in a PicoStar (YJK) package, which is a leadless, surface-mount design with a compact footprint of 1.53 mm x 0.77 mm and a maximum height of 0.36 mm. This MOSFET is designed to provide low on-state resistance and high efficiency, making it suitable for a variety of applications where space and power efficiency are critical.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS (Drain-to-Source Voltage) VGS = 0 V, IDS = –250 μA -20 - -20 V
VGS (Gate-to-Source Voltage) - - -12 V
ID (Continuous Drain Current) - -3.2 -5.3 A
IDM (Pulsed Drain Current) Pulse duration ≤ 100 μs, duty cycle ≤ 1% -31 - -31 A
PD (Power Dissipation) - 0.5 1.4 W
VGS(th) (Gate-to-Source Threshold Voltage) VDS = VGS, IDS = –250 μA -1.3 -0.95 -0.7 V
RDS(on) (Drain-to-Source On Resistance) VGS = –4.5 V, IDS = –0.9 A 35 - 42 mΩ
TJ (Operating Junction Temperature) - -55 - 150 °C

Key Features

  • Ultra-Low Profile: The CSD25485F5T features a very low profile of 0.36 mm, making it ideal for space-constrained applications.
  • Low On-State Resistance: With RDS(on) as low as 29.7 mΩ at VGS = –8 V, this MOSFET offers high efficiency and low power loss.
  • High Current Capability: The device can handle continuous drain currents up to –3.2 A and pulsed drain currents up to –31 A.
  • Gate ESD Protection: The MOSFET includes gate ESD protection, enhancing its reliability in various operating conditions.
  • Wide Operating Temperature Range: The device operates over a temperature range of –55°C to 150°C, making it suitable for diverse applications.

Applications

  • Portable Electronics: The compact size and low power consumption make it ideal for use in smartphones, tablets, and other portable devices.
  • Automotive Systems: Suitable for automotive applications due to its wide operating temperature range and high reliability.
  • Industrial Control Systems: Used in industrial control systems where space is limited and high efficiency is required.
  • Power Management Systems: Employed in power management systems for its low on-state resistance and high current handling capabilities.

Q & A

  1. What is the maximum drain-to-source voltage for the CSD25485F5T?

    The maximum drain-to-source voltage (VDS) is –20 V.

  2. What is the typical on-state resistance of the CSD25485F5T at VGS = –4.5 V?

    The typical on-state resistance (RDS(on)) at VGS = –4.5 V is 35 mΩ.

  3. What is the continuous drain current rating for the CSD25485F5T?

    The continuous drain current (ID) rating is –3.2 A.

  4. What is the operating temperature range for the CSD25485F5T?

    The operating temperature range is –55°C to 150°C.

  5. What type of package does the CSD25485F5T come in?

    The CSD25485F5T comes in a PicoStar (YJK) package, which is a leadless, surface-mount design.

  6. What is the maximum height of the PicoStar package?

    The maximum height of the PicoStar package is 0.36 mm.

  7. Does the CSD25485F5T have gate ESD protection?

    Yes, the CSD25485F5T includes gate ESD protection.

  8. What is the typical junction-to-ambient thermal resistance for the CSD25485F5T?

    The typical junction-to-ambient thermal resistance (RθJA) is 90°C/W for devices mounted on FR4 material with 1-in^2 (6.45-cm^2), 2-oz (0.071-mm) thick Cu.

  9. What are some common applications for the CSD25485F5T?

    Common applications include portable electronics, automotive systems, industrial control systems, and power management systems.

  10. How many pins does the PicoStar package have?

    The PicoStar package has 3 pins.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 4.5 V
Vgs (Max):-12V
Input Capacitance (Ciss) (Max) @ Vds:533 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD25485F5T CSD25485F5
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 8V
Rds On (Max) @ Id, Vgs 35mOhm @ 900mA, 8V 35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4.5 V 3.5 nC @ 4.5 V
Vgs (Max) -12V -12V
Input Capacitance (Ciss) (Max) @ Vds 533 pF @ 10 V 533 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN

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