CSD25485F5
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Texas Instruments CSD25485F5

Manufacturer No:
CSD25485F5
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.2A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD25485F5 is a -20-V, P-channel NexFET™ power MOSFET produced by Texas Instruments. This component is part of the FemtoFET™ family, designed to minimize footprint while maintaining high performance. It is particularly optimized for handheld and mobile applications, offering a significant reduction in size compared to standard small signal MOSFETs. The ultra-small footprint and low profile make it an ideal choice for space-constrained designs.

Key Specifications

ParameterValue
ManufacturerTexas Instruments
Part NameCSD25485F5
Voltage Rating (Vds)-20 V
Channel TypeP-Channel
On-Resistance (Rds(on))29.7 mΩ
Package TypePICOSTAR-3 (YJK)
Package Dimensions1.53 mm × 0.77 mm
Pad Pitch0.50 mm
Height0.36 mm
Operating Temperature Range-55°C to 150°C
ESD Protection> 4-kV HBM, > 2-kV CDM
RoHS ComplianceYes
Lead and Halogen FreeYes

Key Features

  • Low-on resistance of 29.7 mΩ
  • Low Qg and Qgd for efficient switching
  • Ultra-small footprint: 1.53 mm × 0.77 mm with 0.50-mm pad pitch
  • Low profile: 0.36-mm height
  • Integrated ESD protection diode rated > 4-kV HBM and > 2-kV CDM
  • Lead and halogen free, RoHS compliant

Applications

The CSD25485F5 is designed for use in handheld and mobile applications where space is a critical factor. It is suitable for replacing standard small signal MOSFETs in various designs, including but not limited to:

  • Smartphones and tablets
  • Laptops and portable computers
  • Wearable devices
  • IoT devices

Q & A

  1. What is the voltage rating of the CSD25485F5 MOSFET?
    The CSD25485F5 has a voltage rating of -20 V.
  2. What is the on-resistance of the CSD25485F5?
    The on-resistance (Rds(on)) of the CSD25485F5 is 29.7 mΩ.
  3. What package type does the CSD25485F5 come in?
    The CSD25485F5 comes in a PICOSTAR-3 (YJK) package.
  4. What are the dimensions of the CSD25485F5 package?
    The package dimensions are 1.53 mm × 0.77 mm with a 0.50-mm pad pitch.
  5. Is the CSD25485F5 RoHS compliant?
    Yes, the CSD25485F5 is RoHS compliant and lead and halogen free.
  6. What is the operating temperature range of the CSD25485F5?
    The operating temperature range is -55°C to 150°C.
  7. Does the CSD25485F5 have integrated ESD protection?
    Yes, it has an integrated ESD protection diode rated > 4-kV HBM and > 2-kV CDM.
  8. What types of applications is the CSD25485F5 suitable for?
    The CSD25485F5 is suitable for handheld and mobile applications, including smartphones, tablets, laptops, wearable devices, and IoT devices.
  9. How does the CSD25485F5 compare to standard small signal MOSFETs?
    The CSD25485F5 provides a significant reduction in footprint size compared to standard small signal MOSFETs while maintaining high performance.
  10. Where can I find the datasheet for the CSD25485F5?
    The datasheet for the CSD25485F5 can be found on the Texas Instruments website or through other electronic component databases like SnapEDA and AllDataSheet.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 4.5 V
Vgs (Max):-12V
Input Capacitance (Ciss) (Max) @ Vds:533 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD25485F5 CSD25485F5T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 8V
Rds On (Max) @ Id, Vgs 35mOhm @ 900mA, 8V 35mOhm @ 900mA, 8V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4.5 V 3.5 nC @ 4.5 V
Vgs (Max) -12V -12V
Input Capacitance (Ciss) (Max) @ Vds 533 pF @ 10 V 533 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN

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