Overview
The CSD18543Q3AT is a high-efficiency power MOSFET produced by Texas Instruments. It is part of the NexFET™ family and features an integrated Schottky diode. This MOSFET is designed for high-efficiency power management applications, offering fast switching speeds and low on-state resistance. It is packaged in a small SON (Small Outline No-lead) package measuring 3mm x 3mm, making it suitable for space-constrained designs. The CSD18543Q3AT is ideal for various power supply and motor control applications due to its reliable power management and control capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-to-Source Voltage) | 60 | V |
| ID (Continuous Drain Current, Package Limited) | 35 | A |
| ID (Continuous Drain Current, Silicon Limited at TC=25°C) | 60 | A |
| IDM (Pulsed Drain Current, max) | 156 | A |
| RDS(on) at VGS=4.5 V (max) | 15.6 | mΩ |
| RDS(on) at VGS=10 V (max) | 9.9 | mΩ |
| QG (Gate Charge, total at 10 V) | 11.1 | nC |
| QGD (Gate Charge, gate-to-drain) | 1.7 | nC |
| QGS (Gate Charge, gate-to-source) | 3.1 | nC |
| VGS (Gate-to-Source Voltage) | ±20 | V |
| VGSTH (Threshold Voltage, typ) | 2.0 | V |
| Operating Temperature Range | -55 to 150 | °C |
| Package/Case | VSONP-8 |
Key Features
- Ultra-low on-state resistance (RDS(on)) of 8.1 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V.
- Fast switching speeds, making it suitable for high-frequency applications.
- Integrated Schottky diode for improved efficiency.
- Low gate charge (Qg) and low thermal resistance.
- Avalanche rated and RoHS, lead-free, and halogen-free compliant.
- Compact SON 3.3-mm x 3.3-mm package for space-efficient designs.
Applications
- Solid State Relay Switches
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Isolated Converter Primary Side Switch
- Motor Control
Q & A
- Q: What is the maximum drain-to-source voltage (VDS) of the CSD18543Q3AT?
A: The maximum drain-to-source voltage (VDS) is 60 V.
- Q: What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
A: The typical on-state resistance (RDS(on)) at VGS = 10 V is 8.1 mΩ.
- Q: Is the CSD18543Q3AT suitable for high-frequency applications?
A: Yes, the fast switching speed of the CSD18543Q3AT makes it suitable for high-frequency power management applications.
- Q: What is the package type and dimensions of the CSD18543Q3AT?
A: The CSD18543Q3AT is packaged in a VSONP-8 package measuring 3mm x 3mm.
- Q: What is the maximum continuous drain current (ID) for the CSD18543Q3AT?
A: The maximum continuous drain current (ID) is 35 A (package limited) and 60 A (silicon limited at TC=25°C).
- Q: Is the CSD18543Q3AT RoHS compliant?
A: Yes, the CSD18543Q3AT is RoHS, lead-free, and halogen-free compliant.
- Q: What are some typical applications of the CSD18543Q3AT?
A: Typical applications include solid state relay switches, DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control.
- Q: What is the operating temperature range of the CSD18543Q3AT?
A: The operating temperature range is -55 to 150 °C.
- Q: Does the CSD18543Q3AT have an integrated Schottky diode?
A: Yes, the CSD18543Q3AT features an integrated Schottky diode for improved efficiency.
- Q: What is the gate charge (Qg) total at 10 V for the CSD18543Q3AT?
A: The gate charge (Qg) total at 10 V is 11.1 nC.
