CSD17585F5T
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Texas Instruments CSD17585F5T

Manufacturer No:
CSD17585F5T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.9A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD17585F5T is a 30V N-channel FemtoFET™ MOSFET produced by Texas Instruments. This ultra-compact, high-performance MOSFET is designed for applications where space and efficiency are critical. It is particularly suited for handheld and mobile devices, offering a significant reduction in size compared to standard small-signal MOSFETs. The CSD17585F5T is optimized for industrial load switching and general-purpose switching applications, making it a versatile choice for engineers seeking reliable and efficient power management solutions.

Key Specifications

ParameterValueUnitNotes
VDS30VDrain-Source Voltage
RDS(on)22VGS = 10V
Qg1.9nCTotal Gate Charge (4.5V)
Qgd0.39nCGate-Drain Charge
VGS(th)1.3VThreshold Voltage
Package1.53mm x 0.77mm-FemtoFET™ SMD

Key Features

  • Ultra-low on-resistance for high efficiency.
  • Compact size (1.53mm x 0.77mm) ideal for space-constrained applications.
  • Integrated ESD protection diode with ratings >4kV HBM and >2kV CDM.
  • RoHS compliant and halogen-free, ensuring environmental safety.
  • Optimized for industrial load switching and general-purpose switching.

Applications

The CSD17585F5T is widely used in handheld and mobile devices, industrial load switching, and general-purpose switching applications. Its compact size and high efficiency make it ideal for power management in portable electronics, IoT devices, and small-scale industrial systems. Additionally, its robust ESD protection ensures reliability in sensitive environments.

Q & A

1. What is the maximum drain-source voltage for the CSD17585F5T?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 22mΩ at VGS = 10V.

3. What is the total gate charge (Qg) for this device?

The total gate charge is 1.9nC at 4.5V.

4. Does the CSD17585F5T include ESD protection?

Yes, it features an integrated ESD protection diode with ratings >4kV HBM and >2kV CDM.

5. What is the package size of the CSD17585F5T?

The package size is 1.53mm x 0.77mm, making it one of the smallest MOSFETs available.

6. Is this MOSFET RoHS compliant?

Yes, the CSD17585F5T is RoHS compliant and halogen-free.

7. What are the primary applications of this MOSFET?

It is optimized for industrial load switching and general-purpose switching applications.

8. What is the threshold voltage (VGS(th)) of the CSD17585F5T?

The threshold voltage is 1.3V.

9. How does this MOSFET compare to standard small-signal MOSFETs?

The CSD17585F5T offers a significant reduction in size while maintaining high performance, making it ideal for space-constrained applications.

10. Is the CSD17585F5T suitable for automotive applications?

While it is primarily designed for industrial and general-purpose switching, its robust ESD protection and compact size make it a potential candidate for certain automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-SMD, No Lead
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Similar Products

Part Number CSD17585F5T CSD17585F5
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta) 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 900mA, 10V 27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V 5.1 nC @ 10 V
Vgs (Max) 20V 20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V 380 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-SMD, No Lead 3-SMD, No Lead

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