CSD17585F5
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Texas Instruments CSD17585F5

Manufacturer No:
CSD17585F5
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.9A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD17585F5 is a high-performance N-channel MOSFET produced by Texas Instruments. This component is designed for power management applications, offering low on-resistance and high efficiency. It is part of Texas Instruments' NexFET™ power MOSFET family, which is renowned for its reliability and performance in demanding environments. The CSD17585F5 is ideal for use in applications such as DC-DC converters, motor drives, and load switches, targeting engineers and designers in the industrial, automotive, and consumer electronics sectors. Its compact package and robust design make it a competitive choice for modern power systems.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum voltage
Continuous Drain Current (ID)80AAt TC = 25°C
On-Resistance (RDS(on))1.85At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum voltage
Power Dissipation (PD)238WAt TC = 25°C
Operating Junction Temperature (TJ)-55 to +175°CTemperature range
PackagePowerPAK® SO-8-Compact surface-mount package

Key Features

  • Low on-resistance (RDS(on)) for reduced power losses and improved efficiency.
  • High continuous drain current (ID) capability, suitable for high-power applications.
  • Robust thermal performance with a wide operating junction temperature range.
  • Compact PowerPAK® SO-8 package for space-constrained designs.
  • Optimized for fast switching applications, enhancing system responsiveness.

Applications

The CSD17585F5 is widely used in various industries due to its high efficiency and reliability. Key application areas include:

  • DC-DC Converters: Provides efficient power conversion in step-up and step-down circuits.
  • Motor Drives: Ensures smooth and efficient control of motors in industrial and automotive systems.
  • Load Switches: Ideal for managing power distribution in consumer electronics and portable devices.
  • Power Management: Enhances performance in battery management systems and power supplies.

Q & A

1. What is the maximum drain-source voltage for the CSD17585F5?

The maximum drain-source voltage (VDS) is 40V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is 80A at a case temperature of 25°C.

3. What is the typical on-resistance?

The typical on-resistance (RDS(on)) is 1.85mΩ at a gate-source voltage of 10V.

4. What package does the CSD17585F5 use?

It uses the PowerPAK® SO-8 package.

5. What is the operating temperature range?

The operating junction temperature (TJ) ranges from -55°C to +175°C.

6. Is the CSD17585F5 suitable for high-frequency switching?

Yes, it is optimized for fast switching applications.

7. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive power management systems.

8. What is the power dissipation rating?

The power dissipation (PD) is 238W at 25°C.

9. Does the CSD17585F5 support high-current applications?

Yes, its high continuous drain current makes it ideal for high-current applications.

10. Where can I find detailed specifications for the CSD17585F5?

Detailed specifications are available on the Texas Instruments website or distributor platforms like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-SMD, No Lead
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Similar Products

Part Number CSD17585F5 CSD17585F5T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta) 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 900mA, 10V 27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V 5.1 nC @ 10 V
Vgs (Max) 20V 20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V 380 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-SMD, No Lead 3-SMD, No Lead

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