CSD16301Q2
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Texas Instruments CSD16301Q2

Manufacturer No:
CSD16301Q2
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 5A 6SON
Delivery:
Payment:
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Product Introduction

Overview

The CSD16301Q2 is a high-performance N-channel MOSFET produced by Texas Instruments, designed for power management applications. This product belongs to the NexFET™ Power MOSFET series, which is renowned for its low on-resistance and high efficiency. The CSD16301Q2 is specifically tailored for use in compact, high-density designs, making it ideal for applications such as DC-DC converters, load switches, and battery management systems. Its market positioning targets engineers and designers in the consumer electronics, industrial automation, and automotive sectors who require reliable and efficient power switching solutions. The unique selling points of this MOSFET include its ultra-low RDS(on), compact package size, and thermal performance, which collectively enhance system efficiency and reliability.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)18A
On-Resistance (RDS(on))5.3@ VGS = 4.5 V
Gate-Source Voltage (VGS)±12V
Power Dissipation (PD)2.5W
PackageSON (2 mm x 2 mm)Compact footprint
Operating Temperature Range-55 to 150°C

Key Features

  • Ultra-low RDS(on): Enhances efficiency and reduces power losses in high-current applications.
  • Compact SON package: Enables high-density PCB designs, saving board space.
  • Optimized thermal performance: Ensures reliable operation under high-power conditions.
  • Fast switching speed: Improves performance in high-frequency applications.
  • Robust ESD protection: Enhances durability and reliability in demanding environments.

Applications

The CSD16301Q2 is widely used in various applications, including:

  • DC-DC Converters: Provides efficient power conversion in portable devices and power supplies.
  • Load Switches: Enables precise control of power distribution in consumer electronics.
  • Battery Management Systems (BMS): Ensures safe and efficient charging and discharging in battery-powered devices.
  • Motor Control: Facilitates compact and efficient motor drive solutions in industrial and automotive systems.

Q & A

1. What is the maximum drain-source voltage (VDS) of the CSD16301Q2?

The maximum drain-source voltage is 30 V.

2. What is the typical on-resistance (RDS(on)) of this MOSFET?

The typical on-resistance is 5.3 mΩ at VGS = 4.5 V.

3. What package does the CSD16301Q2 use?

It uses a compact SON package with dimensions of 2 mm x 2 mm.

4. What is the continuous drain current (ID) rating?

The continuous drain current rating is 18 A.

5. Is the CSD16301Q2 suitable for high-frequency switching applications?

Yes, its fast switching speed makes it ideal for high-frequency applications.

6. What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 150°C.

7. Does the CSD16301Q2 have ESD protection?

Yes, it features robust ESD protection for enhanced durability.

8. Can this MOSFET be used in automotive applications?

Yes, its thermal performance and reliability make it suitable for automotive systems.

9. What is the power dissipation (PD) of the CSD16301Q2?

The power dissipation is 2.5 W.

10. What are the key advantages of the CSD16301Q2 in power management?

Its ultra-low RDS(on), compact size, and thermal performance make it highly efficient and reliable for power management applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:24mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.8 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-SON
Package / Case:6-SMD, Flat Leads
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