Overview
The CSD15380F3 is a 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET produced by Texas Instruments. This device is designed to minimize footprint size, making it ideal for replacing standard small signal MOSFETs in various applications. It features an ultra-small footprint with dimensions of 0.73 mm × 0.64 mm and an ultra-low profile of 0.36 mm in height. The CSD15380F3 is optimized for use in handheld and mobile devices, offering improved switching speeds due to its ultra-low capacitance and integrated ESD protection diode.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS Drain-to-Source Voltage | VGS = 0 V, IDS = 250 μA | 20 | V |
| VGS Maximum Gate-Source Voltage | 10 | V | |
| ID Maximum Drain Current | 0.5 | A | |
| RDS(on) Drain-to-Source On-Resistance | VGS = 4.5 V | 1170 mΩ | mΩ |
| VGS(th) Threshold Voltage | 1.1 | V | |
| Qg Gate Charge Total (4.5 V) | VDS = 10 V, IDS = 0.1 A | 0.216 nC | nC |
| Qgd Gate Charge Gate-to-Drain | 0.027 nC | nC | |
| TJ Maximum Junction Temperature | 150 | °C | |
| RθJA Junction-to-Ambient Thermal Resistance | Minimum Cu mounting area | 255 °C/W | °C/W |
Key Features
- Ultra-low capacitance (CiSS and COSS) for improved switching speeds.
- Ultra-low gate charge (Qg and Qgd).
- Ultra-small footprint: 0.73 mm × 0.64 mm and ultra-low profile: 0.36 mm in height.
- Integrated ESD protection diode rated > 4-kV HBM and > 2-kV CDM.
- Lead and halogen free, RoHS compliant.
Applications
The CSD15380F3 is particularly suited for handheld and mobile applications where space is limited and high performance is required. It is ideal for replacing standard small signal MOSFETs, offering a substantial reduction in footprint size while maintaining or improving performance. Common applications include data line switching, power management in portable devices, and other scenarios where low capacitance and fast switching times are critical.
Q & A
- What is the maximum drain-to-source voltage of the CSD15380F3?
The maximum drain-to-source voltage (VDS) is 20 V.
- What is the typical on-resistance of the CSD15380F3?
The typical drain-to-source on-resistance (RDS(on)) at VGS = 4.5 V is 1170 mΩ.
- What are the dimensions of the CSD15380F3?
The device has an ultra-small footprint of 0.73 mm × 0.64 mm and an ultra-low profile of 0.36 mm in height.
- Does the CSD15380F3 have integrated ESD protection?
Yes, it includes an integrated ESD protection diode rated > 4-kV HBM and > 2-kV CDM.
- What is the maximum junction temperature of the CSD15380F3?
The maximum junction temperature (TJ) is 150 °C.
- Is the CSD15380F3 RoHS compliant?
Yes, the CSD15380F3 is lead and halogen free and RoHS compliant.
- What is the typical junction-to-ambient thermal resistance of the CSD15380F3?
The typical junction-to-ambient thermal resistance (RθJA) with minimum Cu mounting area is 255 °C/W.
- What are some common applications for the CSD15380F3?
Common applications include handheld and mobile devices, data line switching, and power management in portable devices.
- What package type does the CSD15380F3 come in?
The CSD15380F3 comes in a PicoStar (YJM) package with 3 pins.
- What is the maximum drain current of the CSD15380F3?
The maximum drain current (ID) is 0.5 A.
